Patents by Inventor Aya Hino
Aya Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200295143Abstract: An object of the present invention is to provide: an oxide semiconductor thin film which is produced at relatively low cost and has a high carrier mobility and a high resistance to light stress when used for forming a thin film transistor; and a thin film transistor formed using the oxide semiconductor thin film. The oxide semiconductor thin film contains In, Zn, and Fe, wherein, with respect to a total number of In atoms, Zn atoms, and Fe atoms, a number of In atoms accounts for greater than or equal to 20 atm % and less than or equal to 89 atm %, a number of Zn atoms accounts for greater than or equal to 10 atm % and less than or equal to 79 atm %, and a number of Fe atoms accounts for greater than or equal to 0.2 atm % and less than or equal to 2 atm %. The present invention involves a thin film transistor including the oxide semiconductor thin film.Type: ApplicationFiled: October 29, 2018Publication date: September 17, 2020Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Yumi TERAMAE, Hiroshi GOTO, Mototaka OCHI, Aya HINO
-
Patent number: 8853695Abstract: A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.Type: GrantFiled: October 12, 2007Date of Patent: October 7, 2014Assignee: Kobe Steel, Ltd.Inventors: Aya Hino, Hiroshi Gotou
-
Patent number: 8786090Abstract: The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.Type: GrantFiled: November 27, 2007Date of Patent: July 22, 2014Assignee: Kobe Steel, Ltd.Inventors: Hiroshi Gotou, Katsufumi Tomihisa, Aya Hino, Hiroyuki Okuno, Junichi Nakai, Nobuyuki Kawakami, Mototaka Ochi
-
Patent number: 8044399Abstract: A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.Type: GrantFiled: September 13, 2007Date of Patent: October 25, 2011Assignee: Kobe Steel, Ltd.Inventors: Aya Hino, Hiroshi Gotou, Hiroyuki Okuno, Junichi Nakai
-
Patent number: 7994503Abstract: An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.Type: GrantFiled: December 4, 2007Date of Patent: August 9, 2011Assignee: Kobe Steel, Ltd.Inventors: Aya Hino, Katsufumi Tomihisa, Hiroshi Gotou, Takashi Onishi
-
Patent number: 7943933Abstract: Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.Type: GrantFiled: May 23, 2008Date of Patent: May 17, 2011Assignee: Kobe Steel, Ltd.Inventors: Aya Hino, Hiroshi Gotou
-
Patent number: 7781767Abstract: Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.Type: GrantFiled: May 3, 2007Date of Patent: August 24, 2010Assignee: Kobe Steel, Ltd.Inventors: Nobuyuki Kawakami, Hiroshi Gotoh, Aya Hino
-
Publication number: 20100207121Abstract: A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.Type: ApplicationFiled: October 12, 2007Publication date: August 19, 2010Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd)Inventors: Aya Hino, Hiroshi Gotou
-
Publication number: 20100163877Abstract: A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.Type: ApplicationFiled: September 13, 2007Publication date: July 1, 2010Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Aya Hino, Hiroshi Gotou, Hiroyuki Okuno, Junichi Nakai
-
Publication number: 20100065847Abstract: The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.Type: ApplicationFiled: November 27, 2007Publication date: March 18, 2010Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Hiroshi Gotou, Katsufumi Tomihisa, Aya Hino, Hiroyuki Okuno, Junichi Nakai, Nobuyuki Kawakami, Mototaka Ochi
-
Publication number: 20100012935Abstract: An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.Type: ApplicationFiled: December 4, 2007Publication date: January 21, 2010Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel Ltd)Inventors: Aya Hino, Katsufumi Tomihisa, Hiroshi Gotou, Takashi Onishi
-
Publication number: 20080315203Abstract: Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.Type: ApplicationFiled: May 23, 2008Publication date: December 25, 2008Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL LTD.)Inventors: Aya HINO, Hiroshi GOTOU
-
Patent number: 7411298Abstract: A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.Type: GrantFiled: August 2, 2006Date of Patent: August 12, 2008Assignee: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Nobuyuki Kawakami, Toshihiro Kugimiya, Hiroshi Gotoh, Katsufumi Tomihisa, Aya Hino
-
Publication number: 20070278497Abstract: Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.Type: ApplicationFiled: May 3, 2007Publication date: December 6, 2007Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Nobuyuki KAWAKAMI, Hiroshi Gotoh, Aya Hino
-
Publication number: 20070040172Abstract: A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.Type: ApplicationFiled: August 2, 2006Publication date: February 22, 2007Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Nobuyuki Kawakami, Toshihiro Kugimiya, Hiroshi Gotoh, Katsufumi Tomihisa, Aya Hino
-
Publication number: 20060275618Abstract: A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.Type: ApplicationFiled: May 11, 2006Publication date: December 7, 2006Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Toshihiro Kugimiya, Katsufumi Tomihisa, Aya Hino, Katsutoshi Takagi