Abstract: There is provided a compound which provides a semiconductor material. The compound is represented by General Formula (1) wherein Ar represents an aryl group which may have a substituent or a heteroaryl group which may have a substituent, and R1 represents an acyclic alkyl group having 1 to 20 carbon atoms wherein hydrogen atom in the alkyl group may be replaced by a halogeno group, a nitrile group or an aryl group, and —CH2— in the alkyl group may be replaced by —O—, —R?C?CR?—, —CO—, —OCO—, —COO—, —S—, —SO2—, —SO—, —NH—, —NR?— or —C?C— provided that, with respect to each of an oxygen atom, a sulfur atom and a nitrogen atom, the same atoms are not directly bonded to each other, wherein R? represents an acyclic or cyclic alkyl group having 1 to 20 carbon atoms.

Abstract: A dispersion contains, as essential ingredients, light-emitting nanocrystals, a polymeric dispersant having an amine value of 5 mg/KOH g or more, and a stimulation-responsive curable material that cures in response to an external stimulus.

Abstract: A dispersion contains, as essential ingredients, light-emitting nanocrystals, a polymeric dispersant having an amine value of 5 mg/KOH g or more, and a stimulation-responsive curable material that cures in response to an external stimulus.

Abstract: A dispersion contains, as essential ingredients, light-emitting nanocrystals, a polymeric dispersant having an amine value of 5 mg/KOH g or more, and a stimulation-responsive curable material that cures in response to an external stimulus.

Abstract: Provided are a compound which is excellent in solubility in a solvent and easily provides a film exhibiting high mobility without complicated processes, an organic semiconductor material using the same, and an organic semiconductor ink which enables easy fabrication of an organic transistor composed of a practical configuration. The problems are solved by a method of producing a dinaphthothiophene derivative, the method including the following steps (I) and (II): (I) a first step of subjecting a naphthol derivative represented by General Formula (A) and a naphthalene thiol derivative represented by General Formula (B) to dehydration condensation in the presence of acid to produce a sulfide derivative represented by General formula (C); and (II) a second step of performing dehydrogenation reaction of the sulfide derivative (C) in the presence of a transition metal salt or a transition metal complex to produce a dinaphthothiophene derivative (D).

Abstract: There is provided a compound which provides a semiconductor material. The compound is represented by General Formula (1) wherein Ar represents an aryl group which may have a substituent or a heteroaryl group which may have a substituent, and R1 represents an acyclic alkyl group having 1 to 20 carbon atoms wherein hydrogen atom in the alkyl group may be replaced by a halogeno group, a nitrile group or an aryl group, and —CH2— in the alkyl group may be replaced by —O—, —R?C?CR?—, —CO—, —OCO—, —COO—, —S—, —SO2—, —SO—, —NH—, —NR?— or —C?C— provided that, with respect to each of an oxygen atom, a sulfur atom and a nitrogen atom, the same atoms are not directly bonded to each other, wherein R? represents an acyclic or cyclic alkyl group having 1 to 20 carbon atoms.

Abstract: Provided are a compound which is excellent in solubility in a solvent and easily provides a film exhibiting high mobility without complicated processes, an organic semiconductor material using the same, and an organic semiconductor ink which enables easy fabrication of an organic transistor composed of a practical configuration. The problems are solved by a method of producing a dinaphthothiophene derivative, the method including the following steps (I) and (II): (I) a first step of subjecting a naphthol derivative represented by General Formula (A) and a naphthalene thiol derivative represented by General Formula (B) to dehydration condensation in the presence of acid to produce a sulfide derivative represented by General formula (C); and (II) a second step of performing dehydrogenation reaction of the sulfide derivative (C) in the presence of a transition metal salt or a transition metal complex to produce a dinaphthothiophene derivative (D).

Abstract: The present invention, the present invention relates to an organic semiconductor material having a benzothienobenzothiophene skeleton, an organic semiconductor ink containing the organic semiconductor material, and an organic transistor using the organic semiconductor material. An object of the present invention is to provide an organic semiconductor material that easily provides a film having a high carrier mobility without the need for a complicated process. It was found that a BTBT derivative having a particular arylene acetylene structure is crystallized by way of a high-order liquid crystal phase having a highly ordered molecular arrangement, and thus the BTBT derivative easily forms a film having a high mobility without requiring complicated heat treatment even when the film is formed by printing. This finding led to the achievement of the object.

Abstract: The present invention, the present invention relates to an organic semiconductor material having a benzothienobenzothiophene skeleton, an organic semiconductor ink containing the organic semiconductor material, and an organic transistor using the organic semiconductor material. An object of the present invention is to provide an organic semiconductor material that easily provides a film having a high carrier mobility without the need for a complicated process. It was found that a BTBT derivative having a particular arylene acetylene structure is crystallized by way of a high-order liquid crystal phase having a highly ordered molecular arrangement, and thus the BTBT derivative easily forms a film having a high mobility without requiring complicated heat treatment even when the film is formed by printing. This finding led to the achievement of the object.