Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate. A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate. A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

Abstract: To provide a polishing composition capable of polishing objects to be polished, such as simple substance silicon, silicon compounds, and metals, at a high polishing removal rate. The polishing composition contains a polishing removal accelerator containing a compound having a ring structure configured to contain four or more nitrogen atoms, abrasives, and a liquid medium.