Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1?x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1?x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1?x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Abstract: According to the present disclosure, a strain gauge has: a flexible substrate; a resistor formed on the substrate; and a pair of electrodes formed on the substrate and electrically connected with the resistor via conductive traces, and, in this strain gauge, a width of the resistor is 10 ?m or more and 100 ?m or less, and the conductive traces include a portion with a width of 5 ?m or more and 100 ?m or less.

Abstract: A strain gauge includes a flexible substrate and a resistor formed of material including at least one of chromium or nickel, the resistor being situated above the substrate. The strain gauge includes a functional layer formed of an insulating material that has a higher thermal conductivity than the resistor, the functional layer being situated between the substrate and the resistor. The resistor includes multiple resistive patterns that are juxtaposed. The resistor includes folded portions each of which connects end portions of resistive portions that are next to each other. A first metallic layer formed of a material that has a higher thermal conductivity than the resistor is laminated on the folded portions.

Abstract: A strain gauge includes a flexible substrate, at least one resistor formed on or above the substrate, and a pair of electrodes formed on or above the substrate, electrodes being electrically coupled to the resistor via lines, respectively. Each of the lines electrically connects an end of the resistor and a given electrode, the end being situated in a width direction of a grid. Each of the lines includes a first metallic layer and a second metallic layer that is formed of a material having a lower resistance than a material of the first metallic layer, the second metallic layer being situated on the first metallic layer.

Abstract: A strain gauge includes a flexible resin substrate and a resistor formed of a film that includes Cr, CrN, and Cr2N, the resistor being situated on or above the substrate. A film thickness of the resistor is greater than or equal to 100 nm and less than or equal to 700 nm.

Abstract: A strain gauge includes a flexible substrate; a resistor formed of material including at least one from among chromium and nickel, on or above the substrate; and electrodes electrically coupled to the resistor. Each electrode includes a terminal section extending from a corresponding end portion from among end portions of the resistor; a first metallic layer formed of copper, a copper alloy, nickel, or a nickel alloy, on or above the terminal section; and a second metallic layer formed of material having better solder wettability than the first metallic layer, on or above the first metallic layer.

Abstract: A strain gauge includes a flexible substrate; a resistor formed of material including at least one from among chromium and nickel, on or above the substrate; and electrodes electrically coupled to the resistor. Each electrode includes a terminal section extending from a corresponding end portion from among end portions of the resistor; a first metallic layer formed of copper, a copper alloy, nickel, or a nickel alloy, on or above the terminal section; and a second metallic layer formed of material having better solder wettability than the first metallic layer, on or above the first metallic layer.

Abstract: A polycarbonate containing an ether diol residue producible from a polysaccharide and expressed by the following formula (1), and a diol residue expressed by the following formula (2) —O—(CmH2m)—O— ??(2) (here, m is an integer of 2 to 12), wherein said ether diol residue amounts to 65-98 wt. % of all the diol residues, and having a glass transition temperature of 90° C. or higher.

Abstract: A polycarbonate containing an ether diol residue producible from a polysaccharide and expressed by the following formula (1), and a diol residue expressed by the following formula (2) —O—(CmH2m)—O—??(2) (here, m is an integer of 2 to 12), wherein said ether diol residue amounts to 65-98 wt. % of all the diol residues, and having a glass transition temperature of 90° C. or higher.