Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: displaying a target object on each of mutually spaced positions on the touchscreen; moving a specific object from a prescribed start position to target objects that are adjacent to each other among the plurality of target objects, the specific object simultaneously arriving at the adjacent target objects; detecting a prescribed operation input to the touchscreen in connection with the moving specific object; determining whether or not the prescribed operation is input within a validity determination area including at least the adjacent target objects and an area therebetween; and determining whether or not the prescribed operation is input at a prescribed timing.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: displaying a target object on each of mutually spaced positions on the touchscreen; moving a specific object from a prescribed start position to target objects that are adjacent to each other among the plurality of target objects, the specific object simultaneously arriving at the adjacent target objects; detecting a prescribed operation input to the touchscreen in connection with the moving specific object; determining whether or not the prescribed operation is input within a validity determination area including at least the adjacent target objects and an area therebetween; and determining whether or not the prescribed operation is input at a prescribed timing.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: A transparent film for a display is provided. The transparent film enables smooth writing in input operation using a pen-input touch panel, like writing on paper with a pencil. The transparent film comprises a transparent substrate film and a coat layer on at least one side of the transparent substrate film. The total light transmittance of the transparent film in accordance with JIS K7136 is adjusted to not lower than 85%, and the surface of the coat layer is adjusted to a maximum height of rolling circle waviness profile (WEM) of not less than 15 ?m in accordance with JIS B0610. The transparent film is disposed at the outermost side of a display in a pen-input touch panel. The coat layer may contain a particle and a binder component. The particle may have an average particle size of about 1 to 5 times as large as the thickness of the coat layer. The binder component may further contain a thermoplastic elastomer.

Abstract: Provided are: a high-melting-point resin fiber having heat resistance and solvent resistance, offering excellent workability/formability, and having a diameter of 4 ?m or less; and a nonwoven fabric including the high-melting-point resin fiber. Also provided is a method for efficiently producing a high-melting-point resin fiber having a diameter of 4 ?m or less, via laser melt electrospinning. The high-melting-point resin fiber according to the present invention includes a resin having a melting point of 250° C. or higher and has a diameter of 4 ?m or less. In the high-melting-point resin fiber, the resin having a melting point of 250° C. or higher is preferably a PEEK. The fiber preferably has a degree of crystallinity of 30% or less.

Abstract: A transparent film for a display is provided. The transparent film enables smooth writing in input operation using a pen-input touch panel, like writing on paper with a pencil. The transparent film comprises a transparent substrate film and a coat layer on at least one side of the transparent substrate film. The total light transmittance of the transparent film in accordance with JIS K7136 is adjusted to not lower than 85%, and the surface of the coat layer is adjusted to a maximum height of rolling circle waviness profile (WEM) of not less than 15 ?m in accordance with JIS B0610. The transparent film is disposed at the outermost side of a display in a pen-input touch panel. The coat layer may contain a particle and a binder component. The particle may have an average particle size of about 1 to 5 times as large as the thickness of the coat layer. The binder component may further contain a thermoplastic elastomer.