Abstract: To provide a solid-state imaging device that can achieve a higher image quality. The solid-state imaging device includes a plurality of imaging pixels that is orderly arranged in accordance with a certain pattern. The imaging pixels include: at least a semiconductor substrate in which a photoelectric conversion unit is formed; and a filter that transmits certain light and is formed on the light incidence face side of the semiconductor substrate. At least one of the plurality of imaging pixels is replaced with a ranging pixel having a filter that transmits the certain light, to form at least one ranging pixel. A partition wall is formed between the filter of the at least one ranging pixel and the filter adjacent to the filter of the at least one ranging pixel, and the partition wall contains a material that is almost the same as the material of the filter of the at least one imaging pixel replaced with the ranging pixel.

Abstract: To provide a solid-state imaging device that can achieve a higher image quality. The solid-state imaging device includes a plurality of imaging pixels that is orderly arranged in accordance with a certain pattern. The imaging pixels include: at least a semiconductor substrate in which a photoelectric conversion unit is formed; and a filter that transmits certain light and is formed on the light incidence face side of the semiconductor substrate. At least one of the plurality of imaging pixels is replaced with a ranging pixel having a filter that transmits the certain light, to form at least one ranging pixel. A partition wall is formed between the filter of the at least one ranging pixel and the filter adjacent to the filter of the at least one ranging pixel, and the partition wall contains a material that is almost the same as the material of the filter of the at least one imaging pixel replaced with the ranging pixel.