Abstract: A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

Abstract: A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions.

Abstract: A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.

Abstract: A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.