Abstract: Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.

Abstract: Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.

Abstract: Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.

Abstract: Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.

Abstract: Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.

Abstract: In a method of manufacturing a high withstanding voltage MOSFET, a region to be doped with impurities and a region to be doped with no impurity are provided when ion implantation of the impurities is performed in the channel forming region, for controlling a threshold voltage. The region to be doped with no impurity is suitably patterned so that impurity concentration of the channel forming region near boundaries between a well region and a source region and between the well region and a drain region having the same conductivity type as the well region may be increased, to thereby induce a reverse short channel effect. By canceling a short channel effect with the reverse short channel effect induced by the above-mentioned method, the short channel effect of the high withstanding voltage MOSFET may be suppressed.

Abstract: Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.

Abstract: In a method of manufacturing a high withstanding voltage MOSFET, a region to be doped with impurities and a region to be doped with no impurity are provided when ion implantation of the impurities is performed in the channel forming region, for controlling a threshold voltage. The region to be doped with no impurity is suitably patterned so that impurity concentration of the channel forming region near boundaries between a well region and a source region and between the well region and a drain region having the same conductivity type as the well region may be increased, to thereby induce a reverse short channel effect. By canceling a short channel effect with the reverse short channel effect induced by the above-mentioned method, the short channel effect of the high withstanding voltage MOSFET may be suppressed.

Abstract: An electric motor has a rotor having an end portion and a recessed portion formed at the end portion. A rotational shaft is mounted to the rotor. A stator covers an outer peripheral portion of the rotor and forms a magnetic field that generates a torque around the rotational shaft to thereby rotate the rotational shaft and the rotor. A bearing rotatably supports the rotational shaft and is entirely spaced-apart from the end portion of the rotor in an axial direction of the rotational shaft. A slider is slidably mounted around the rotational shaft and supports rotation of the rotational shaft about a rotational axis thereof. The slider is interposed between the bearing and the rotor so that a portion of the slider is entirely contained in the recessed portion of the rotor and the remaining portion of the slider is disposed in the space between the bearing and the rotor and in contact with the bearing.

Abstract: To provide an electric motor efficiently operating a torque to a rotor by a stator while preventing an increase in a friction load by a slider and capable of achieving small-sized formation of a total of an apparatus in an axis line direction, an electric motor 1 includes a rotor 3 substantially in a cylindrical shape, a rotating shaft 4 provided at a center of rotation of the rotor 3, a stator 5 for covering an outer peripheral portion 3a of the rotor 3 and having yokes 23, 24 capable of operating a torque around the rotating shaft 4 of the rotor 3 by forming a magnetic field, bearings 13, 14 fixed by the stator 5 by support members 11, 12 for supporting the rotating shaft 4 rotatably, and sliders 8 substantially in a plate-like shape interposed between the bearings 13, 14 and end portions 3c of the rotor 3, and the end portion 3c of the rotor 3 is formed with a first recessed portion 6 for containing at least a portion of the slider 8 in an axis line L direction of the rotating shaft 4 slidably around the r

Abstract: There is provided a composition comprising a sililated urethane resin having a polyoxyalkylene polymer as its main chain, having a reactive silicon group at a terminal of the molecule and having a substituted urea bond in the molecule, a diluent (B) having a boiling point of not lower than 250° C. and a curing catalyst (C), wherein the curing catalyst (C) is a reaction product of a poly(dialkylstannoxane) dicarboxylate represented by the following general formula (1) and a silicate compound represented by the general formula R3nSi(OR4)4-n (2).