Abstract: Disclosed is a method of dissolving a surface of a semiconductor substrate or a thin-film surface layer formed on the semiconductor substrate, with an oxidizing agent and fluorine-series gas. The method is characterized in that an initial dissolution rate is controlled by gradually increasing a concentration of fluorine-series gas introduced in a dissolving solution containing the oxidizing agent.

Abstract: A fluorescent X-ray analyzing apparatus includes a source of excitation (2) for irradiating a silicon-based sample (S) with primary X-rays (B2) to excite the silicon-based sample (S), a detector (4) for detecting fluorescent X-rays (B5) emitted from the silicon-based sample (S), and an analyzer (6) for analyzing elements contained in the silicon-based sample (S) based on a result of detection performed by the detector (4). The primary X-rays (B2) emitted from the source of excitation (2) have a wavelength higher than, but in the vicinity of a wavelength at an Si--K absorption edge so that generation of fluorescent X-rays (B5) of Si is suppressed to minimize a noise which would occur during detection of fluorescent X-rays (B5) of Na and Al to thereby accomplish an accurate analysis of a minute quantity of NA and Al contained in the sample (S).

Abstract: A method is provided for analyzing an impurity on a semiconductor substrate. In this method, those to-be-measured areas on a surface of a semiconductor substrate are exposed with an ultraviolet radiation to provide corresponding oxide films. By doing so, an impurity is trapped in the oxide film at each area of the semiconductor substrate. The surface of the semiconductor substrate is cleaned with an acid solution to remove an impurity on other than the areas on the surface of the semiconductor substrate. The surface of the semiconductor substrate is exposed with a hydrofluoric acid vapor to dissolve the oxide films into very fine droplets containing an impurity. These droplets are moved on the surface of the semiconductor substrate to collect these droplets into a drop on the surface of the semiconductor substrate. The impurity in the drop is measured by a known chemical spectrometer.

Abstract: The fluorescent X-ray generated by elements when an X-ray is total reflected from a substrate surface is detected by a fluorescent X-ray detecting circuit; the fluorescent X-ray peak generated by the substrate element and the fluorescent X-ray peaks generated by contaminative elements are separated by a peak separating circuit; an integral intensity I.sub.0 of the fluorescent X-ray peak generated by the substrate element and integral intensities I of the fluorescent X-ray peaks generated by the contaminative elements are calculated by an integral intensity calculating circuit, respectively; and contaminative element concentrations N=N.sub.0 .multidot.(.eta..sub.0 / I.sub.0).multidot.(I / .eta.) (where N.sub.0 denotes the surface concentration of the substrate; .eta..sub.0 denotes the fluorescent yield of the substrate; and .eta.

Abstract: A contaminating-element analyzing method enables precise identification of contaminating elements and precise calculation of concentrations thereof by eliminating a broad peak waveform due to Rayleigh scattering and Compton scattering and a background waveform from a measured waveform of a contaminated sample. A blank sample or samples are irradiated by an X-ray beam under a constant condition to obtain a plurality of measured waveforms of fluorescent X-rays, and the plurality of measured waveforms are averaged to obtain a blank waveform. Then a contaminated sample is irradiated by the X-ray beam under the same condition as that for the blank sample to obtain a measured waveform of fluorescent X-rays. The blank waveform is subtracted from the measured waveform of contaminated sample, and then the contaminating elements are identified and the concentrations thereof are calculated on the basis of the waveform data after the subtraction process.

Abstract: In the method and apparatus for analyzing contaminative element concentrations, a fluorescent X-ray generated by elements when an X-ray is total reflected from the surface of a substrate is detected by a fluorescent X-ray detector; a peak of the fluorescent X-ray generated by a substrate element and peaks of the fluorescent X-ray generated by other contaminative elements are separated from the detected fluorescent X-ray waveform by a peak separating circuit; and the concentrations of the detected contaminative elements are calculated on the basis of the separated peaks by a calculating circuit. In the peak detection, in particular, the peaks of the contaminative elements to be analyzed are detected from the waveform. When other peaks are present within a predetermed number of channels (energy eV) before and after each detected peak, the channel numbers and the signal intensities between the respective peaks are extracted.

Abstract: Element identification and concentration calculation can be conducted with precision by correcting waveform distortion caused by the energy resolution of a detection system. A smoothing process is effected on a measured waveform of fluorescent X-rays obtained from an object to be measured. A device function of the detection system is obtained for each analytic element, based on the energy resolution of the detection system for a fluorescent X-ray energy value of each analytic element. A deconvolution process is effected on the measured waveform thus smoothed, by using the device functions of the detection system. Analytic elements are identified and concentrations of the analytic elements are obtained from the waveform data after the deconvolution process. The measured waveform is compensated for absorption in a beryllium window prior to smoothing.

Abstract: A contaminating-element analyzing method and an apparatus of the same are disclosed. Differential smoothing process is performed for a measured waveform of a fluorescent X-ray obtained from an object to be measured so as to detect a peak of the measured waveform, the object containing a contaminating element. A model function with variables which are initial parameters with respect to each peak of the measured waveform is provided so as to constitute a model waveform. A nonlinear optimizing process is performed using the method of least squares of the model waveform and the measured waveform so as to decide initial parameters of each model function and to obtain discriminated waveforms. A contaminating element is identified corresponding to each of the discriminated waveforms and obtaining an integrated intensity of a discrete waveform of each of the identified contaminating elements.

Abstract: A semiconductor treatment apparatus has a gas-phase decomposing device for decomposing a gas-phase on a surface of a semiconductor substrate, a substrate supporting device for supporting the substrate, and a substrate transfer device for transferring the substrate between the gas-phase decomposing device and the substrate supporting device. The apparatus further has a liquid-drop applicator for applying a liquid-drop on the surface of the substrate supported by the substrate supporting device, with the liquid-drop being brought into contact with the surface of the substrate, and a liquid-drop preserving device for preserving the liquid-drop that has been applied to the surface of the substrate.

Abstract: A method of manufacturing semiconductor devices comprises steps of selectively forming metal leads on the surface a semiconductor substrate, and immersing the semiconductor substrate in a solution containing dissolved metal for depositing the dissolved metal on the surfaces of the metal leads. The solution contains dissolved metal having an ionization tendency equal to or smaller than ionization of the metal leads.

Abstract: In the present invention, a semiconductor thin film, i.e., a thin film formed on a semiconductor substrate such as a gate oxide film, is formed and decomposed within a single treating vessel. An apparatus of the present invention for decomposing a semiconductor thin film comprises a treating vessel housing a semiconductor substrate, section for introducing into the treating vessel mediums for forming a desired semiconductor thin film on the semiconductor substrate housed in the treating vessel, section for introducing into the treating vessel a medium for decomposing into liquid the thin film formed on the substrate, and section for recovering the decomposed liquid of the semiconductor thin film.