Abstract: Disclosed are techniques for fabricating transistors such as gate all around (GAA) transistors and techniques for measuring nano channel thicknesses using Raman spectroscopy.

Abstract: This disclosure describes systems, methods, and devices for estimating dimple etch recess depth in a gate-all-around transistor. A method may include receiving, by a device, first measurements of the gate-all-around transistor, the first measurements based on first optical data from a spacer etch stage of fabricating the gate-all-around transistor; inputting, by the at least one processor, using a feed forward network, the first measurements to a machine learning model trained to estimate dimple etch recess in the gate-all-around transistor; inputting, by the at least one processor, to the machine learning model, second optical data from a dimple etch stage of fabricating the gate-all-around transistor; and generating, by the at least one processor, using the machine learning model, based on the second optical data and the first measurements, second measurements comprising the first measurements and dimple etch recess estimates for the gate-all-around transistor.

Abstract: An electrical output stage suitable for high-voltage operation, including a first MOSFET, a second MOSFET, a first switching device, a second switching device, and reverse bias circuitry. The first and second MOSFETs are electrically coupled in series between a power rail and an output node. The first switching device is configured to control a gate-to-source voltage of the first MOSFET, and the second switching device is configured to control a gate-to-source voltage of the second MOSFET. The reverse bias circuitry is configured to bias a source of the second MOSFET such that a gate of the second MOSFET is reversed biased with respect to the source of the second MOSFET, when each of the first MOSFET and the second MOSFET is in its respective off-state.

Abstract: This disclosure describes systems, methods, and devices for estimating dimple etch recess depth in a gate-all-around transistor. A method may include receiving, by a device, first measurements of the gate-all-around transistor, the first measurements based on first optical data from a spacer etch stage of fabricating the gate-all-around transistor; inputting, by the at least one processor, using a feed forward network, the first measurements to a machine learning model trained to estimate dimple etch recess in the gate-all-around transistor; inputting, by the at least one processor, to the machine learning model, second optical data from a dimple etch stage of fabricating the gate-all-around transistor; and generating, by the at least one processor, using the machine learning model, based on the second optical data and the first measurements, second measurements comprising the first measurements and dimple etch recess estimates for the gate-all-around transistor.

Abstract: The present disclosure relates to a method of controlling a digital-to-analog converter, DAC, system. The DAC system includes a plurality of DAC cores connected in parallel with the outputs of the DAC cores coupled so as to provide a combined analog output. Each DAC core receives a digital signal which is a modified version of a digital input provided to the DAC system. By providing modified digital signals to the DAC cores and using a plurality of DAC cores, the monotonicity of the DAC system may be improved.

Abstract: Rule data sets are received. These rule sets are associated with constraints controlling how records that are associated with the goods are consolidated. These goods are to be received for importing. An estimate score indicative of the risk for inspection for a first set of goods that are to be imported is generated. Based at least in part on the rule data sets and the generated estimate, a plurality of records are consolidated to a single instance for the first set of goods. Based on the consolidating, a user interface is caused to be generated that renders information associated with the consolidating.

Abstract: This disclosure describes systems, methods, and devices for estimating dimple etch recess depth in a gate-all-around transistor. A method may include receiving, by a device, first measurements of the gate-all-around transistor, the first measurements based on first optical data from a spacer etch stage of fabricating the gate-all-around transistor; inputting, by the at least one processor, using a feed forward network, the first measurements to a machine learning model trained to estimate dimple etch recess in the gate-all-around transistor; inputting, by the at least one processor, to the machine learning model, second optical data from a dimple etch stage of fabricating the gate-all-around transistor; and generating, by the at least one processor, using the machine learning model, based on the second optical data and the first measurements, second measurements comprising the first measurements and dimple etch recess estimates for the gate-all-around transistor.

Abstract: Rule data sets are received. These rule sets are associated with constraints controlling how records that are associated with the goods are consolidated. These goods are to be received for importing. An estimate score indicative of the risk for inspection for a first set of goods that are to be imported is generated. Based at least in part on the rule data sets and the generated estimate, a plurality of records are consolidated to a single instance for the first set of goods. Based on the consolidating, a user interface is caused to be generated that renders information associated with the consolidating.

Abstract: Rule data sets are received. These rule sets are associated with constraints controlling how records that are associated with the goods are consolidated. These goods are to be received for importing. An estimate score indicative of the risk for inspection for a first set of goods that are to be imported is generated. Based at least in part on the rule data sets and the generated estimate, a plurality of records are consolidated to a single instance for the first set of goods. Based on the consolidating, a user interface is caused to be generated that renders information associated with the consolidating.

Abstract: Rule data sets are received. These rule sets are associated with constraints controlling how records that are associated with the goods are consolidated. These goods are to be received for importing. An estimate score indicative of the risk for inspection for a first set of goods that are to be imported is generated. Based at least in part on the rule data sets and the generated estimate, a plurality of records are consolidated to a single instance for the first set of goods. Based on the consolidating, a user interface is caused to be generated that renders information associated with the consolidating.

Abstract: An IC can include shared reference voltage buffer circuitry having an amplifier circuit. A commonly-routed amplifier shared output voltage node can be shared between at least two digital-to-analog converters (DACs) respectively via at least first and second individually routed traces from the shared output voltage node to respective first and second local reference voltage nodes at the DACs. Respective first and second routing trace resistances can be based on current draw of the corresponding DAC, such as to provide an equal voltage drop across the first and second routing resistances. This can help avoid voltage contention or conflict at the shared output voltage node from forcing/sensing the voltages at the first and second local reference voltage nodes. In a further example, at least one of the first and second individually routed traces can include a binary tree hierarchical routing arrangement of at least some of the DACs.

Abstract: An IC can include shared reference voltage buffer circuitry having an amplifier circuit. A commonly-routed amplifier shared output voltage node can be shared between at least two digital-to-analog converters (DACs) respectively via at least first and second individually routed traces from the shared output voltage node to respective first and second local reference voltage nodes at the DACs. Respective first and second routing trace resistances can be based on current draw of the corresponding DAC, such as to provide an equal voltage drop across the first and second routing resistances. This can help avoid voltage contention or conflict at the shared output voltage node from forcing/sensing the voltages at the first and second local reference voltage nodes. In a further example, at least one of the first and second individually routed traces can include a binary tree hierarchical routing arrangement of at least some of the DACs.