Patents by Inventor Ayan Kumar Biswas

Ayan Kumar Biswas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magneto-elastic non-volatile multiferroic logic and memory with ultralow energy dissipation
    Patent number: 9379162
    Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: June 28, 2016
    Assignee: Virginia Commonwealth University
    Inventors: Supriyo Bandyopadhyay, Jayasimha Atulasimha, Ayan Kumar Biswas
  • MAGNETO-ELASTIC NON-VOLATILE MULTIFERROIC LOGIC AND MEMORY WITH ULTRALOW ENERGY DISSIPATION
    Publication number: 20160141333
    Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.
    Type: Application
    Filed: November 18, 2014
    Publication date: May 19, 2016
    Inventors: Supriyo Bandyopadhyay, Jayasimha Atulasimha, Ayan Kumar Biswas