Abstract: A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.

Abstract: A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: Various implementations provide systems and methods for writing data to memory bit cells. An example implementation includes a write circuit that couples both a bitline and a complementary bitline to power (VDD) by positive-channel metal oxide semiconductor (PMOS) transistors. By using PMOS transistors instead of NMOS transistors at the applicable nodes, such implementations may avoid a voltage drop between VDD and the bitlines, thereby allowing the bitlines to reach a substantially full VDD voltage level when appropriate. Additionally, various implementations avoid dynamic nodes that share charge across NMOS transistors, thereby allowing a given bitline to reach a substantially full VDD voltage level when appropriate. Accordingly, some implementations may experience higher levels of writability and static noise margin than other implementations.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: A method for providing context based multimodal predictions in an electronic device is provided. The method includes detecting an input on a touch screen keyboard displayed on a screen of the electronic device. Further, the method includes generating one or more context based multimodal predictions based on the detected input from a language model. Furthermore, the method includes displaying the one or more context based multimodal predictions in the electronic device. An electronic device includes a processor configured to detect an input through a touch screen keyboard displayed on a screen of the electronic device, generate one or more context based multimodal predictions in accordance with the detected input from a language model, and cause the screen to display the one or more context based multimodal predictions in the electronic device.