Patents by Inventor Ayanori Endo

Ayanori Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device
    Patent number: 8502222
    Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: August 6, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
  • AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND DISPLAY DEVICE
    Publication number: 20120146021
    Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 14, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
  • Amorphous oxide semiconductor, semiconductor device, and thin film transistor
    Patent number: 8154017
    Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: April 10, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
  • Field-effect transistor and method for manufacturing the same
    Patent number: 7737438
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: June 15, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND THIN FILM TRANSISTOR
    Publication number: 20100044703
    Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.
    Type: Application
    Filed: April 15, 2008
    Publication date: February 25, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
  • FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080272370
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Application
    Filed: July 3, 2008
    Publication date: November 6, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • Field-effect transistor and method for manufacturing the same
    Patent number: 7411209
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: August 12, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080067508
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Application
    Filed: September 7, 2007
    Publication date: March 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • Sheet material identifying device and image forming apparatus having sheet material identifying device
    Patent number: 7082832
    Abstract: A sheet material identifying device for identifying the kind of sheet material by applying vibration on the sheet material. The identifying device has a vibrator for applying vibration on the sheet material, a vibration sensor for detecting, via the sheet material, vibration applied by the vibrator, a device for changing a vibrating state between the vibrator and the vibration sensor, and an identifying section for identifying the kind of sheet material based on a detection result of the vibration sensor. Also, an image forming apparatus making use of the sheet material identifying device and a method of identifying the kind of sheet material are provided.
    Type: Grant
    Filed: January 5, 2004
    Date of Patent: August 1, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hisato Yabuta, Norio Kaneko, Takehiko Kawasaki, Ayanori Endo
  • Sheet material identifying device and image forming apparatus having sheet material identifying device
    Publication number: 20040187579
    Abstract: A sheet material identifying device for identifying the kind of sheet material by applying vibration on the sheet material. The identifying device has a vibrator for applying vibration on the sheet material, a vibration sensor for detecting, via the sheet material, vibration applied by the vibrator, a device for changing a vibrating state between the vibrator and the vibration sensor, and an identifying section for identifying the kind of sheet material based on a detection result of the vibration sensor. Also, an image forming apparatus making use of the sheet material identifying device and a method of identifying the kind of sheet material are provided.
    Type: Application
    Filed: January 5, 2004
    Publication date: September 30, 2004
    Inventors: Hisato Yabuta, Norio Kaneko, Takehiko Kawasaki, Ayanori Endo