Abstract: A method for producing a polycrystalline silicon processed article includes removing a polycrystalline silicon rod, obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method, in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod. The polycrystalline silicon rod is detached from the electrode and the carbon member present on the end portion of the polycrystalline silicon rod is covered using a covering material until the processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state.

Abstract: A method for producing a polycrystalline silicon processed article includes removing a polycrystalline silicon rod, obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method, in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod. The polycrystalline silicon rod is detached from the electrode and the carbon member present on the end portion of the polycrystalline silicon rod is covered using a covering material until the processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state.

Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride. [Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.

Abstract: The invention recovers highly pure hydrogen from the exhaust purge gas and reuses it as a hydrogen source in other production steps contributing to greatly reducing the disposal cost and the cost of producing polysilicon. The hydrogen chloride contained in the exhaust gas discharged from the step of depositing polysilicon by using trichlorosilane, is adsorbed by active carbon. The active carbon layer is then purged with the hydrogen gas, and the adsorbed hydrogen chloride is desorbed. Next, the exhaust purge gas is brought into contact with a hydrogen chloride-absorbing solution such as an aqueous solution of sodium hydroxide to remove the hydrogen chloride from the exhaust purge gas and to separate and recover the highly pure hydrogen gas. The recovered hydrogen gas is compressed and is fed as a hydrogen source to other steps of producing, for example, fumed silica.

Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride. [Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.

Abstract: [Problems] Attempts have already been made to effectively utilize the by-produced hydrogen chloride in the exhaust gas discharged from the step of producing polysilicon. Hydrogen in the exhaust gas, too, has been partly utilized without using but discarding, however, the purge hydrogen that is used for desorbing the hydrogen chloride adsorbed in the above step. The invention recovers highly pure hydrogen from the exhaust purge gas and reuses it as a hydrogen source in other production steps contributing to greatly reducing the disposal cost and the cost of producing polysilicon. [Means for Solution] The hydrogen chloride contained in the exhaust gas discharged from the step of depositing polysilicon by using trichlorosilane, is adsorbed by active carbon. The active carbon layer is then purged with the hydrogen gas, and the adsorbed hydrogen chloride is desorbed.