Patents by Inventor Ayata HARAYAMA

Ayata HARAYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method for semiconductor device
    Patent number: 11862471
    Abstract: A manufacturing method for a semiconductor device according to an embodiment includes performing first etching for forming a recess in a layer to be processed using a reactive ion etching method, performing a first treatment of supplying a silylation agent to the recess after the first etching, and performing second etching of etching at least a bottom surface of the recess using a reactive ion etching method after the first treatment.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: January 2, 2024
    Assignee: Kioxia Corporation
    Inventors: Atsushi Takahashi, Ayata Harayama, Yuya Nagata
  • MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
    Publication number: 20220238345
    Abstract: A manufacturing method for a semiconductor device according to an embodiment includes performing first etching for forming a recess in a layer to be processed using a reactive ion etching method, performing a first treatment of supplying a silylation agent to the recess after the first etching, and performing second etching of etching at least a bottom surface of the recess using a reactive ion etching method after the first treatment.
    Type: Application
    Filed: September 10, 2021
    Publication date: July 28, 2022
    Applicant: Kioxia Corporation
    Inventors: Atsushi TAKAHASHI, Ayata HARAYAMA, Yuya NAGATA