Patents by Inventor Ayato OHKAWARA

Ayato OHKAWARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same
    Patent number: 11200933
    Abstract: The magnetic memory element (100) includes: a conductive layer that includes a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer (30) that is adjacent to the first ferromagnetic layer (20) and includes an insulating material; a reference layer (40) that is adjacent to the barrier layer (30) and has at least one second ferromagnetic layer (41) having a fixed magnetization direction; a cap layer (50) that is adjacent to the reference layer (40) and includes a conductive material; a first terminal (T1) that is capable of introducing a current into one end of the heavy metal layer (10) in the longitudinal direction; a second terminal (T2) that is capable of introducing a current into the other end of the heavy metal layer (10) in the longitudinal direction; and a third terminal (T3) that is capable of introducing a current into the cap layer (50).
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: December 14, 2021
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Chaoliang Zhang, Ayato Ohkawara, Kyota Watanabe, Hideo Ohno, Tetsuo Endoh
  • MAGNETIC MULTILAYER FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND METHOD FOR PRODUCING SAME
    Publication number: 20200286536
    Abstract: The magnetic memory element (100) includes: a conductive layer that includes a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer (30) that is adjacent to the first ferromagnetic layer (20) and includes an insulating material; a reference layer (40) that is adjacent to the barrier layer (30) and has at least one second ferromagnetic layer (41) having a fixed magnetization direction; a cap layer (50) that is adjacent to the reference layer (40) and includes a conductive material; a first terminal (T1) that is capable of introducing a current into one end of the heavy metal layer (10) in the longitudinal direction; a second terminal (T2) that is capable of introducing a current into the other end of the heavy metal layer (10) in the longitudinal direction; and a third terminal (T3) that is capable of introducing a current into the cap layer (50).
    Type: Application
    Filed: March 21, 2017
    Publication date: September 10, 2020
    Inventors: Shunsuke FUKAMI, Chaoliang ZHANG, Ayato OHKAWARA, Kyota WATANABE, Hideo OHNO, Tetsuo ENDOH