Patents by Inventor Ayayi C. Ahyi

Ayayi C. Ahyi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including polar insulation layer capped by non-polar insulation layer
    Patent number: 9362367
    Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: June 7, 2016
    Assignees: Auburn University, Rutgers, The State University of New Jersey
    Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
  • Semiconductor Devices Including Polar Insulation Layer Capped by Non-Polar Insulation Layer
    Publication number: 20150318358
    Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.
    Type: Application
    Filed: July 15, 2015
    Publication date: November 5, 2015
    Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
  • Semiconductor devices including polar insulation layer capped by non-polar insulation layer
    Patent number: 9117817
    Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: August 25, 2015
    Assignees: Auburn University, Rutgers, The State University of New Jersey
    Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
  • Semiconductor Devices Including Polar Insulation Layer Capped By Non-Polar Insulation Layer
    Publication number: 20140077227
    Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.
    Type: Application
    Filed: September 16, 2013
    Publication date: March 20, 2014
    Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman