Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active region and at least one graded or stepped interface layer between the dilute nitride active region and an adjacent higher bandgap semiconductor layer, such as a cladding layer are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least one bandgap within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least one graded or stepped interface layer have a higher carrier collection efficiency and a reduced dark current when compared to photodetectors comprising a dilute nitride active region without a graded or stepped interface layer.

Abstract: Optoelectronic devices having GaInNAsSb, GaInNAsBi or GaInNAsSbBi active layers are disclosed. The optoelectronic devices have an active or absorbing layer, with a bandgap within a range from 0.7 eV and 1.2 eV. The active layer is coupled to a multiplication layer. The multiplication layer is designed to provide a large optical gain with a high signal-to-noise ratio at low light levels at wavelengths up to 1.8 ?m.

Abstract: A stacked superluminescent light-emitting diode having multiple active regions coupled together using and via tunnel junctions. The material compositions of each of the active regions (corresponding quantum wells and/or barriers) differ from one another to provide a controlled different light emission at wavelength (and/or wavelength range) for each junction. In operation of the device, the spectral width of the aggregate light output generated by different junctions is defined by all the junctions, thereby producing a spectrally-broader emission than that of any single, separately taken junction within the device. Thus, the device is configured to operate as a broadband infrared light source.

Abstract: Broadband photodetectors, detector arrays, sensors and systems, capable of detection and sensing ultraviolet (UV), visible (VIS) and shortwave infrared (SWIR) wavelengths of light, are disclosed. The devices may operate over a wavelength range between about 0.2 ?m and 1.8 ?m. In particular, the devices include a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV and a luminescent layer.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

Abstract: Stacked edge-emitting lasers having multiple active regions coupled together using tunnel junctions. The composition of each of the active regions (quantum wells and/or barriers) differs to provide a controlled different emission wavelength for each junction, when each junction is individually operated at the same fixed temperature. When the device is under operation, a thermal gradient exists across the junctions, and the emission wavelengths of each junction coincide as the different temperature for each junction causes relative wavelength shifts. Thus, the effect of temperature on the emission wavelength of the device is compensated for, producing a narrower linewidth emission.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

Abstract: Disclosed herein is a laser structure comprising an active region overlying a GaAs substrate. The active region includes a dilute nitride material. The laser is configured to generate light at wavelengths greater than 1300 nm. Also disclosed herein is a photodetector comprising an absorber layer overlying a GaAs substrate. The absorber layer includes a dilute nitride material. The photodetector is configured to detect light at wavelengths greater than 1300 nm. Exemplary dilute nitride materials may include, but are not limited to, GaInNAs and GaInNAsSb. Embodiments of the disclosure may include a dilute nitride-on-GaAs laser structure and a dilute nitride-on-GaAs photodetector.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

Abstract: Semiconductor light absorption devices such as multi junction photovoltaic cells include a chirped distributed Bragg reflector beneath a junction. The chirped distributed Bragg reflector provides a high reflectivity over a broad range of wavelengths and has improved angular tolerance so as to provide increased absorption within an overlying junction over a broader range of wavelengths and incident angles.

Abstract: Semiconductor devices having a high-temperature barrier layer between a III-V material and an underlying substrate are disclosed. The high-temperature barrier layer can minimize or prevent diffusion of arsenic and phosphorous from an overlying layer into the underlying substrate. Dilute nitride-containing multijunction photovoltaic cells incorporating a high-temperature barrier layer exhibit high efficiency.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.