Abstract: A power transistor has a plurality of cells, each cell having a notch formed in a substrate. An insulating material, such as an oxide, is formed within the notch. A semiconductor layer is formed over the substrate and insulating material. The semiconductor layer has a first type of semiconductor material and a second type of semiconductor material opposite the first type of semiconductor material to form the power transistor. A width of the insulating material within the notch is less than a width of the semiconductor layer so that a portion of the substrate extends to the semiconductor layer. The notch can have a slope or a step. The insulating material has a first thickness and a second thickness greater than the first thickness within the notch. The insulating material may extend completely across the interface between substrate and semiconductor layer, or only partially across the interface.

Abstract: A semiconductor device has a substrate and semiconductor layer formed over the substrate. A trench is formed through the semiconductor layer. An insulating material is disposed in the trench. A first column of semiconductor material having a first conductivity type extends through the semiconductor layer adjacent to the trench. A second column of semiconductor material having a second conductivity type extends through the semiconductor layer adjacent to the first column of semiconductor material. A first insulating layer is formed between the insulating material and a side surface of the trench. A source region is formed within the semiconductor layer. A gate region is formed adjacent to the insulating layer. A second insulating layer is formed between the gate region and source region. A conductive layer is formed over the semiconductor layer. The source region is coupled to the conductive layer.

Abstract: A semiconductor device has a substrate and semiconductor layer formed over the substrate. A trench is formed through the semiconductor layer. A polysilicon material is disposed in the trench. A first column of semiconductor material having a first conductivity type extends through the semiconductor layer adjacent to the trench. A second column of semiconductor material having a second conductivity type extends through the semiconductor layer adjacent to the first column of semiconductor material. A conductive layer is formed over the semiconductor layer. The polysilicon material is coupled to the conductive layer and operates as a field plate. A first insulating layer is formed between the polysilicon material and a side surface of the trench. A source region is formed within the semiconductor layer. A gate region is formed adjacent to the insulating layer. A second insulating layer is formed between the gate region and source region.

Abstract: A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third semiconductor layer made of the second semiconductor material can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device or electrical component is formed in the second semiconductor layer. The electrical component can be a power MOSFET. A first insulating layer, such as an oxide layer, is formed over the electrical component, and second insulating layer, such as a nitride layer, is formed over the first insulating layer for protection against radiation.

Abstract: A semiconductor device has a first substrate and a first semiconductor layer having a first semiconductor material formed over the first substrate. A surface of the first semiconductor layer has a first element of the first semiconductor material. A first surface of a second semiconductor layer having the first semiconductor material is joined to the surface of the first semiconductor layer. The first surface of the second semiconductor layer has a second element of the first semiconductor material different from the first element. The first semiconductor material is silicon carbide or cubic silicon carbide. The first element is silicon or carbon, and the second element is carbon or silicon. The semiconductor device provides characteristics of radiation hardening. A third semiconductor layer is formed over a second surface of the second semiconductor layer opposite the first surface. An electrical component is formed over the second semiconductor layer.

Abstract: A semiconductor device has a substrate. The substrate can be multiple layers. A first semiconductor layer made of a first semiconductor material is disposed over the substrate. The first semiconductor material can be substantially defect-free silicon carbide. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third layer can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET or diode. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.

Abstract: A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The first semiconductor material is substantially defect-free silicon carbide, and the second semiconductor material is silicon. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET, diode, insulated gate bipolar transistor, cluster trench insulated gate bipolar transistor, and thyristor. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.

Abstract: A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third semiconductor layer made of the second semiconductor material can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET or diode. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.

Abstract: A semiconductor device has a first substrate made of a first semiconductor material, such as silicon. A sacrificial layer is formed over a first surface of the first substrate. A seed layer is formed over the sacrificial layer. A compliant layer is formed over a second surface of the first substrate opposite the first surface of the first substrate. A first semiconductor layer made of a second semiconductor material, such as silicon carbide, dissimilar from the first semiconductor material is formed over the sacrificial layer. The first substrate and sacrificial layer are removed leaving the first semiconductor layer substantially defect-free. The first semiconductor layer containing the second semiconductor material is formed at a temperature greater than a melting point of the first semiconductor material. A second semiconductor layer is formed over the first semiconductor layer with an electrical component formed in the second semiconductor layer.