Patents by Inventor Ayodhya Nath Tiwari
Ayodhya Nath Tiwari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10672941Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: GrantFiled: August 21, 2019Date of Patent: June 2, 2020Assignees: FLISOM AG, EMPAInventors: Patrick Reinhard, Fabian Pianezzi, Benjamin Bissig, Stephan Buecheler, Ayodhya Nath Tiwari
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Publication number: 20190378951Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: ApplicationFiled: August 21, 2019Publication date: December 12, 2019Inventors: Patrick REINHARD, Fabian PIANEZZI, Benjamin BISSIG, Stephan BUECHELER, Ayodhya Nath TIWARI
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Patent number: 10431709Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: GrantFiled: September 27, 2018Date of Patent: October 1, 2019Assignee: Flisom AGInventors: Patrick Reinhard, Fabian Pianezzi, Benjamin Bissig, Stephan Buecheler, Ayodhya Nath Tiwari
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Patent number: 10396218Abstract: A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).Type: GrantFiled: September 2, 2015Date of Patent: August 27, 2019Assignees: FLISOM AG, EMPAInventors: Patrick Reinhard, Benjamin Bissig, Stephan Buecheler, Ayodhya Nath Tiwari, Fabian Pianezzi
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Publication number: 20190027633Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: ApplicationFiled: September 27, 2018Publication date: January 24, 2019Inventors: Patrick REINHARD, Fabian PIANEZZI, Benjamin BISSIG, Stephan BUECHELER, Ayodhya Nath TIWARI
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Patent number: 10153387Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.Type: GrantFiled: November 13, 2017Date of Patent: December 11, 2018Assignees: FLISOM AG, EMPAInventors: Adrian Chirila, Stephan Buecheler, Fabian Pianezzi, Patrick Reinhard, Ayodhya Nath Tiwari
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Patent number: 10109761Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: GrantFiled: May 21, 2015Date of Patent: October 23, 2018Assignees: FLISOM AG, EMPAInventors: Patrick Reinhard, Fabian Pianezzi, Benjamin Bissig, Stephan Buecheler, Ayodhya Nath Tiwari
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Publication number: 20180069138Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.Type: ApplicationFiled: November 13, 2017Publication date: March 8, 2018Inventors: Adrian CHIRILA, Stephan BUECHELER, Fabian PIANEZZI, Patrick REINHARD, Ayodhya Nath TIWARI
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Patent number: 9837565Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.Type: GrantFiled: December 16, 2013Date of Patent: December 5, 2017Assignees: FLISON AG, EMPAInventors: Adrian Chirila, Stephan Buecheler, Fabian Pianezzi, Patrick Reinhard, Ayodhya Nath Tiwari
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Patent number: 9786807Abstract: A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Se2 or equivalent ABC absorber layer, such as an ABC2 layer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio Ar/Br, in the third at a ratio Ar/Br lower than the previous, in the fourth at a ratio Ar/Br higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.Type: GrantFiled: April 17, 2012Date of Patent: October 10, 2017Assignees: EMPA, FLISOM AGInventors: Adrian Chirila, Ayodhya Nath Tiwari, Patrick Bloesch, Shiro Nishiwaki, David Bremaud
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Publication number: 20170243993Abstract: A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).Type: ApplicationFiled: September 2, 2015Publication date: August 24, 2017Inventors: Patrick REINHARD, Benjamin BISSIG, Stephan BUECHELER, Ayodhya Nath TIWARI, Fabian PIANEZZI
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Publication number: 20170133547Abstract: A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.Type: ApplicationFiled: May 21, 2015Publication date: May 11, 2017Applicant: FLISOM AGInventors: Patrick REINHARD, Fabian PIANEZZI, Benjamin BISSIG, Stephan BUECHELER, Ayodhya Nath TIWARI
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Publication number: 20150333200Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.Type: ApplicationFiled: December 16, 2013Publication date: November 19, 2015Applicants: FLISOM AG, EMPAInventors: Adrian CHIRILA, Stephan BUECHELER, Fabian PIANEZZI, Patrick REINHARD, Ayodhya Nath TIWARI
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Publication number: 20140026956Abstract: A method to fabricate thin-film photovoltaic devices (100) comprising a photovoltaic Cu(In,Ga)Se2 or equivalent ABC absorber layer (130), such as an ABC2 layer, deposited onto a back-contact layer (120) characterized in that said method comprises at least five deposition steps, wherein the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio Ar/Br, in the third at a ratio Ar/Br lower than the previous, in the fourth at a ratio Ar/Br higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.Type: ApplicationFiled: April 17, 2012Publication date: January 30, 2014Applicants: EMPA, FLISOM AGInventors: Adrian Chirila, Ayodhya Nath Tiwari, Patrick Bloesch, Shiro Nishiwaki, David Bremaud