Abstract: A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.