Abstract: The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Abstract: The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Abstract: The present disclosure pertains to a method, a system, and a computer-readable medium for highly precisely measuring the depth of a recess formed in a sample even when, inter alia, the material or pattern density of the sample differs. The method, system, and computer-readable medium involve: using a measurement tool to acquire an image or a brightness distribution of a region including a recess formed in a sample; extracting a first characteristic of the interior of the recess, and a second characteristic pertaining to the dimensions or area of the recess, from the acquired image or brightness distribution; and inputting the extracted first characteristic and second characteristic to a model that indicates the relationship between the first characteristic, the second characteristic, and a depth index of the recess to thereby derive the depth index of the recess.

Abstract: Provided is a depth measurement system comprising a plurality of depth measurement devices which each calculate a depth index value indicating the relative depth of a pattern on a sample, wherein: the plurality of depth measurement devices are classified into one reference device 1001 and an other correction target device 1002; the depth measurement devices each execute a depth measurement recipe for measuring the depth of a predetermined pattern in a measurement subject so as to calculate the depth index value of the predetermined pattern on the basis of a measurement value extracted from an obtained electronic image; and the correction target device stores a correction coefficient associated with the depth measurement recipe and outputs the depth index value of the predetermined pattern which has been corrected using a mathematical model to which the correction coefficient is applied.

Abstract: To correct a difference in signal intensity due to a difference in hardware, for example, temporal deterioration of the hardware in the same device, or a difference in signal intensity between different devices. An adjustment method according to the disclosure specifies an amplification gain with which the same detection signal intensity as that of a comparison target is obtained by comparing correspondence relationships between the detection signal intensity and the amplification gain at different time points in the same charged particle beam device or among different charged particle beam devices.

Abstract: Provided is a technology for evaluating a property of a pattern formed inside a sample from two-dimensional information of the sample. A pattern evaluation system of the present disclosure includes a computer subsystem that executes a process of evaluating a property of a pattern by reading a program from a memory that stores the program for evaluating the property of the pattern formed inside a sample. The computer subsystem executes a process of acquiring an image of the sample; a process of extracting a signal waveform from the image; a process of calculating a feature amount in a predetermined region of the signal waveform; a process of comparing the feature amount with a reference value of the feature amount; and a process of evaluating the property of the pattern based upon a comparison result in the comparison process.

Abstract: The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Abstract: The present disclosure pertains to a method, a system, and a computer-readable medium for highly precisely measuring the depth of a recess formed in a sample even when, inter alia, the material or pattern density of the sample differs.

Abstract: A pattern evaluation device has measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, which can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for the semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on the semiconductor wafer is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the semiconductor wafer, wherein the device conditions for evaluating the semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a part of a pattern of the semiconductor wafer, and the converted device conditions are used to evaluate the replica.

Abstract: Provided is a technology for evaluating a property of a pattern formed inside a sample from two-dimensional information of the sample. A pattern evaluation system of the present disclosure includes a computer subsystem that executes a process of evaluating a property of a pattern by reading a program from a memory that stores the program for evaluating the property of the pattern formed inside a sample. The computer subsystem executes a process of acquiring an image of the sample; a process of extracting a signal waveform from the image; a process of calculating a feature amount in a predetermined region of the signal waveform; a process of comparing the feature amount with a reference value of the feature amount; and a process of evaluating the property of the pattern based upon a comparison result in the comparison process.

Abstract: Provided is a pattern evaluation device with which measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for a semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on a sample is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the sample, wherein the device conditions for evaluating a semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a semiconductor wafer, and the converted device conditions are used to evaluate the replica.

Abstract: A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image.

Abstract: In a control circuit apparatus and an endoscope apparatus circuit disposition in which the outer edge of the first overheating region and the outer edge of the second overheating region approach the outer edge of the first overheating region and the outer edge of the second overheating region to an extreme in a state in which the outer edge of the first overheating region and the outer edge of the second overheating region do not overlap the outer edge of the first overheating region and the outer edge of the second overheating region serves as circuit disposition having a minimum mounting area on a substrate.

Abstract: A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image.