Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.

Abstract: A substrate processing apparatus includes a substrate holder, a processing liquid supply section, an input information acquiring section, a sublimation drying process condition information acquiring section, and a controller. The input information acquiring section acquires input information including at least one of substrate information and processing liquid information. The sublimation drying process condition information acquiring section acquires, from a trained model based on the input information, sublimation drying process condition information indicating a sublimation drying process condition on a processing target substrate. The controller controls the substrate holder and the processing liquid supply section to perform a sublimation drying process on the process target substrate based on the sublimation drying process condition acquired in the sublimation drying process condition information acquiring section.

Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.

Abstract: A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: An object is to quickly regenerate metal ion removal capability of a substrate processing device. To achieve the object, a substrate processing device includes a processing unit, a supply tank and a collection tank. The processing unit performs etching processing on a substrate by using a treatment solution from a first circulation path. The used treatment solution is guided to the collection tank, and circulates in a second circulation path. The second circulation path includes a first partial pipe and a second partial pipe, and a metal removal coating including metal capturing groups for removing metal ions in the treatment solution is applied to an inner wall of the first partial pipe. An acid-based chemical solution is supplied to the first partial pipe from the acid-based chemical solution supply unit, so that metal adsorption force of the metal capturing groups is regenerated.

Abstract: A substrate processing method processes a substrate having a surface in which a plurality of recessed parts is formed. The substrate processing method includes a processing target layer removing process of etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface thereof is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a processing unit which processes a substrate.

Abstract: A substrate in which a low dielectric constant film is formed on a front surface thereof is processed. A densification step of densifying a surface layer portion of the low dielectric constant film to change to a densified layer is executed. Then, after a densified layer forming step, a repair liquid supplying step of supplying a repair liquid, for repairing the densified layer, to a front surface of the low dielectric constant film is executed.

Abstract: Provided is a substrate cleaning method for cleaning a substrate having an oxide film on the surface thereof. The method includes a partial etching step of etching the oxide film to a predetermined film thickness, and a physical cleaning step of executing physical cleaning on the surface of the substrate after the partial etching step. The oxide film may be a natural oxide film with particles at least partially taken into the film. In this case, the partial etching step may either expose the particles from the natural oxide film or increase the exposed portion from the natural oxide film. The physical cleaning may remove, by physical action, the particles exposed from the natural oxide film while leaving the natural oxide film on the surface of the substrate.

Abstract: A chemical solution feeder feeds a chemical solution to a predetermined feed target, and includes: a feed flow path that is connected at its one end to a supply source of a chemical solution at room temperature and at its other end to a feed target, to guide the chemical solution to the feed target from the supply source; a first filter that removes particles in a chemical solution at room temperature injected from the supply source into the feed flow path; a heating unit that heats the chemical solution having passed through the first filter; and a second filter that removes particles in the chemical solution at high temperature heated by the heating unit, flowing through the feed flow path toward the feed target, wherein the first filter is a hydrophilic filter and the second filter is a hydrophobic filter.

Abstract: The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: A substrate treatment unit applies surface treatment to a semiconductor substrate by using a chemical solution. The chemical solution in which metal is dissolved by substrate treatment is discharged into a storage tank and stored. A polyacid supplying unit supplies polyacid of a deletion complex with a deficient portion into the storage tank. The polyacid of deletion complex with a deficient portion is mixed into a used chemical solution containing the metal, and a pH value of the mixed solution is adjusted to between 2 and 3 to capture the metal dissolved in the chemical solution in the deficient portion of the polyacid. In addition, a counter cation is put into the chemical solution so that the polyacid in which the metal is captured is precipitated to be separated from the chemical solution, and thus the metal contained in the chemical solution during the treatment of the semiconductor substrate can be removed to enable the chemical solution to be reclaimed.

Abstract: A substrate processing method processes a substrate having a surface in which a plurality of recessed parts is formed. The substrate processing method includes a processing target layer removing process of etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface thereof is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate.

Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.