Abstract: In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).

Abstract: A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of the anode, and performing the vacuum heating in order to remove absorbed water of a whole of a substrate on which a TFT and the barrier have been provided immediately before a layer containing an organic compound is formed.

Abstract: An object of the present invention is to reduce or eliminate the occurrence of a variety of failure modes (shrink, dark spot and the like) in a light emitting element having an organic compound. The present invention suppresses a non-light emitting region generated immediately after a light emitting element has been fabricated by making the barrier 111 have a curved surface having a radius of curvature at the upper portion or lower portion, washes the surface of the anode 110 with a porous sponge in order to remove minute grains dotted on the surface of the anode, and suppresses the occurrence of a shrink by performing the vacuum heating in order to remove absorbed water of a whole of the substrate on which a TFT and a barrier have been provided immediately before the layer 112 containing an organic compound is formed.

Abstract: A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of the anode, and performing the vacuum heating in order to remove absorbed water of a whole of a substrate on which a TFT and the barrier have been provided immediately before a layer containing an organic compound is formed.

Abstract: In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).

Abstract: An object of the present invention is to reduce or eliminate the occurrence of a variety of failure modes (shrink, dark spot and the like) in a light emitting element having an organic compound. The present invention suppresses a non-light emitting region generated immediately after a light emitting element has been fabricated by making the barrier 111 have a curved surface having a radius of curvature at the upper portion or lower portion, washes the surface of the anode 110 with a porous sponge in order to remove minute grains dotted on the surface of the anode, and suppresses the occurrence of a shrink by performing the vacuum heating in order to remove absorbed water of a whole of the substrate on which a TFT and a barrier have been provided immediately before the layer 112 containing an organic compound is formed.