Abstract: An electrode substrate includes an insulation substrate and a reference electrode on the insulation substrate. The reference electrode includes a silver layer, a first silver chloride layer, and a second silver chloride layer. The silver layer is on the insulation substrate. The first silver chloride layer is on the silver layer on the insulation substrate, and covers the silver layer. The second silver chloride layer is on the first silver chloride layer on the insulation substrate, and covers the first silver chloride layer. An area void fraction of the first silver chloride layer is larger than an area void fraction of the second silver chloride layer in any longitudinal section.

Abstract: A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.

Abstract: A field effect transistor includes a substrate, a material layer on a surface of the substrate and including a two-dimensional material or carbon nanotubes, and particles interposed between the substrate and the material layer.

Abstract: A semiconductor sensor includes an insulating substrate, a semiconductor sheet on the insulating substrate and including graphene or carbon nanotubes, a source electrode and a drain electrode, each being provided on the insulating substrate and electrically coupled to the semiconductor sheet, an oxide film extending over a surface of the semiconductor sheet and including silica, alumina, or a composite oxide of silica and alumina, and a receptor at a surface of the oxide film.

Abstract: A semiconductor sensor includes a substrate, a dielectric layer on the substrate, a first electrode on the dielectric layer, and a second electrode spaced apart from the first electrode and on the dielectric layer, a semiconductor sheet between the first electrode and the second electrode on the dielectric layer and electrically connecting the first electrode and the second electrode to each other, a third electrode at least a portion of which is covered by the dielectric layer and faces the semiconductor sheet with the dielectric layer interposed therebetween, and multiple first attraction portions at least on a surface of the third electrode or in or on the dielectric layer on the surface of the third electrode and attracting an object to be detected.

Abstract: A semiconductor device according to the present invention includes a substrate, a plurality of electrodes on the substrate, an insulator provided with one or a plurality of openings exposing at least one electrode among the plurality of electrodes on the substrate, the insulator covering at least a portion of the plurality of electrodes, and a semiconductor sheet on the insulator and one or a plurality of exposed portions exposed from the one or the plurality of openings on the substrate.

Abstract: A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.