Abstract: A field effect transistor includes a substrate, a material layer on a surface of the substrate and including a two-dimensional material or carbon nanotubes, and particles interposed between the substrate and the material layer.

Abstract: A semiconductor sensor includes an insulating substrate, a semiconductor sheet on the insulating substrate and including graphene or carbon nanotubes, a source electrode and a drain electrode, each being provided on the insulating substrate and electrically coupled to the semiconductor sheet, an oxide film extending over a surface of the semiconductor sheet and including silica, alumina, or a composite oxide of silica and alumina, and a receptor at a surface of the oxide film.

Abstract: A semiconductor sensor includes a substrate, a dielectric layer on the substrate, a first electrode on the dielectric layer, and a second electrode spaced apart from the first electrode and on the dielectric layer, a semiconductor sheet between the first electrode and the second electrode on the dielectric layer and electrically connecting the first electrode and the second electrode to each other, a third electrode at least a portion of which is covered by the dielectric layer and faces the semiconductor sheet with the dielectric layer interposed therebetween, and multiple first attraction portions at least on a surface of the third electrode or in or on the dielectric layer on the surface of the third electrode and attracting an object to be detected.

Abstract: A semiconductor device according to the present invention includes a substrate, a plurality of electrodes on the substrate, an insulator provided with one or a plurality of openings exposing at least one electrode among the plurality of electrodes on the substrate, the insulator covering at least a portion of the plurality of electrodes, and a semiconductor sheet on the insulator and one or a plurality of exposed portions exposed from the one or the plurality of openings on the substrate.

Abstract: A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.