Patents by Inventor Ayumi Tsujimura

Ayumi Tsujimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor element having bivalent and VI group element and an insulating layer
    Patent number: 5488234
    Abstract: Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.
    Type: Grant
    Filed: March 17, 1994
    Date of Patent: January 30, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigeo Yoshii, Kazuhiro Okawa, Ayumi Tsujimura, Tsuneo Mitsuyu