Abstract: An optical modulation device is disclosed which can suppress production of a cause of degradation such as a void or hillock on a light illumination surface thereof and can be incorporated in an image display apparatus of a small size and a high luminance to improve the reliability of the same. The optical modulation device includes first and second surface elements movable relative to each other to form different diffraction gratings to modulate light inputted thereto. Each of the first and second surface elements has a light illumination surface made of an AlCu alloy material. The optical modulation device has an airtight sealed space in which surrounding gas for the first and second surface elements is encapsulated. The surrounding gas contains hydrogen gas or helium gas or both of hydrogen gas and helium gas.

Abstract: A diffraction grating light modulator composed of a plurality of diffraction grating light modulating elements formed on a substrate, each consisting of a lower electrode, belt-like fixed electrodes and movable electrodes supported above the lower electrode, and exposed connecting terminals (for electrical connection to external circuits) electrically connected to the movable electrodes, the fixed electrodes and the movable electrodes constituting a diffraction grating upon application of a voltage to the lower electrode, the diffraction grating light modulator having a protective electrode surrounding the connecting terminals, so that the diffraction grating light modulating element is certainly protected from damage by static electricity.

Abstract: A light reflection and diffraction element for enhancing the contrast of an image display device. In an off state of the element, a portion exhibiting a cyclic structure for diffracting incident light in a region where reflective members having reflection surfaces are aligned is reduced by preventing the generation of unrequired diffracted light. For example, by covering connection regions of the ribbon reflective members by light shielding masks, incident light is shielded. Preferably, any uneven state of the reflection surfaces of the ribbon reflective members is controlled, and a correlation length is made small.

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract: An optical modulation device is disclosed which can suppress production of a cause of degradation such as a void or hillock on a light illumination surface thereof and can be incorporated in an image display apparatus of a small size and a high luminance to improve the reliability of the same. The optical modulation device includes first and second surface elements movable relative to each other to form different diffraction gratings to modulate light inputted thereto. Each of the first and second surface elements has a light illumination surface made of an AlCu alloy material. The optical modulation device has an airtight sealed space in which surrounding gas for the first and second surface elements is encapsulated. The surrounding gas contains hydrogen gas or helium gas or both of hydrogen gas and helium gas.

Abstract: A light reflection and diffraction element able to enhance contrast when applied to an image display device, a light reflection and diffraction element array, and an image display device using the same are provided. In an off state of a light reflection and diffraction element 23, a portion exhibiting a cyclic structure for diffracting incident light in a region where reflective members having reflection surfaces are aligned is reduced by an unrequired diffracted light generation preventing means. For example, by covering connection regions of ribbon reflective members 31a, 31b, and 31c and the connection regions of ribbon reflective members 32a, 32b, and 32c by light shielding masks 43 and 44, incident light Li is prevented from being incident. Alternatively, the connection regions of the ribbon reflective members are reduced. Alternatively, the connection regions of the ribbon reflective members are eliminated by independent interconnects.

Abstract: Providing an electrostatic machine element for restraining deteriorations of practical electrostatic forces between electrodes by an electrostatic shielded effect to prevent instability of an electrode operation, a light diffraction modulation element using the electrostatic machine element and an image display device using the light diffraction modulation element. An edge and an upper side of a first electrode are opened and a dielectric material, the mobility of which depends on a polarity of an electric charge, is used for a second dielectric film. When a drive voltage such that the electric charge having high mobility moves from one dielectric film to another dielectric film, is applied between the first electrode and a second electrode, a charged particle that arrived at the first dielectric film moves further to the upper side of the first electrode.

Abstract: To provide an electrostatic machine element for restraining deteriorations of practical electrostatic force between electrodes by an electrostatic shielded effect to prevent instability of an electrode operation, a light diffraction modulation element using the electrostatic machine element and an image display device using the light diffraction modulation element. An edge and an upper side of a first electrode are opened and a dielectric material of which mobility depends on a polarity of an electric charge is used for a second dielectric film. When a drive voltage such that the electric charge having high mobility can move from a dielectric film to the dielectric film, is applied between the first electrode and a second electrode, a charged particle that arrived at the first dielectric film moves further to the upper side of the first electrode.

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract: An image of an inspection target having a concave and convex pattern is picked up in an off-focus state by an image pickup element 4. Further, the image of the inspection target picked up in the off-focus state is taken in by an image processing computer 6. Based on the image, the image processing computer 6 prepares a light intensity profile having a peak corresponding to a boundary portion between a concave portion and a convex portion of the concave and convex pattern of the inspection target. For example, a change of the width of the concave or convex portion of the concave and convex portion can be detected very accurately, by measuring the width of the concave or convex portion of the concave and convex portion on the basis of the intensity profile.

Abstract: The imaging magnification of an imaging optical system 6 is set such that the image resolution of an ultraviolet CCD camera 5 is within a range from 10 nm to 30 nm, on a resist pattern 102 to be inspected. In addition, every time when the ultraviolet CCD camera 5 picks up an image, the resist pattern 102 to be inspected is irradiated at an irradiation light amount within a range from 0.5 mJ/cm2 to an irradiation threshold value at which the resist pattern 102 is not caused to contract or an irradiation threshold value at which an absorption rate of an anti-reflection film provided near the resist pattern is not caused to change.

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract: An image of an inspection target having a concave and convex pattern is picked up in an off-focus state by an image pickup element 4. Further, the image of the inspection target picked up in the off-focus state is taken in by an image processing computer 6. Based on the image, the image processing computer 6 prepares a light intensity profile having a peak corresponding to a boundary portion between a concave portion and a convex portion of the concave and convex pattern of the inspection target. For example, a change of the width of the concave or convex portion of the concave and convex portion can be detected very accurately, by measuring the width of the concave or convex portion of the concave and convex portion on the basis of the intensity profile.

Abstract: The imaging magnification of an imaging optical system 6 is set such that the image resolution of an ultraviolet CCD camera 5 is within a range from 10 nm to 30 nm, on a resist pattern 102 to be inspected. In addition, every time when the ultraviolet CCD camera 5 picks up an image, the resist pattern 102 to be inspected is irradiated at an irradiation light amount within a range from 0.5 mJ/cm2 to an irradiation threshold value at which the resist pattern 102 is not caused to contract or an irradiation threshold value at which an absorption rate of an anti-reflection film provided near the resist pattern is not caused to change.

Abstract: An optical device having a periodic inverted domain construction is used for second harmonic generating devices or the like. The optical device comprises a ferroelectric crystal substrate which is provided in this surface with a periodic inverted domain structure consisting of a plurality of parallel inverted domain regions arranged at intervals. The thickness t and width w of the inverted domain regions and the thickness T of the ferroelectric crystal substrate meet the criteria expressed by: t/w.gtoreq.1 and 0.1<t/T.ltoreq.1.