Abstract: A method of making nanoscale ordered composites of covalent ceramics through block copolymer-assisted assembly. At least one polymeric precursor is mixed with a block copolymer, and self-assembly of the mixture proceeds through an annealing process. During the annealing step, the polymeric precursor cross-links to form a structure robust enough to survive both the order-disorder transition temperature the block copolymer and the pyrolysis process, yielding ordered nanocomposites of high temperature ceramic materials. The method yields a variety of structures and morphologies. A ceramic material having at least one ceramic phase that has an ordered structure on a nanoscale and thermally stable up to a temperature of at least about 800° C. is also disclosed. The ceramic material is suitable for use in hot gas path assemblies, such as turbine assemblies, boilers, combustors, and the like.

Abstract: The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.

Abstract: Methods of fabricating a semiconductor film with reduced defects comprising lithographically defined nanoscale features patterned into an underlying layer. A semiconductor film is then nucleated within the plurality of nanoscale features. The nanoscale features are aligned with specific crystallographic axes to allow for controlled growth rates. A semiconductor film produced with a greater than four orders of magnitude decrease in the threading dislocation density and thus improved optical and electrical transport properties. The invention applies to wide bandgap semiconductor films, however, also applies to any film-substrate combination where significant lattice and thermal expansion misfit occurs.

Abstract: A method for determining the water strain of an article is provided in the present invention by predetermining a maximum tilt range and radius for the article. Further embodiments of the present invention include a storage medium for data and a polymer for use in a storage medium for data where the storage medium comprises a plurality of layers wherein the aforementioned water strain is calculated for the plurality of layers.