Patents by Inventor Azeddine Zerrade
Azeddine Zerrade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11860533Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.Type: GrantFiled: March 23, 2021Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
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Patent number: 11815809Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.Type: GrantFiled: March 23, 2021Date of Patent: November 14, 2023Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
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Patent number: 11789358Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.Type: GrantFiled: April 20, 2021Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Wen Xiao, Vibhu Jindal, Weimin Li, Sanjay Bhat, Azeddine Zerrade
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Patent number: 11669008Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.Type: GrantFiled: October 22, 2020Date of Patent: June 6, 2023Assignee: Applied Materials, Inc.Inventors: Wen Xiao, Sanjay Bhat, Shiyu Liu, Binni Varghese, Vibhu Jindal, Azeddine Zerrade
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Patent number: 11640109Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.Type: GrantFiled: January 25, 2021Date of Patent: May 2, 2023Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam
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Patent number: 11630385Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.Type: GrantFiled: January 19, 2021Date of Patent: April 18, 2023Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Patent number: 11556053Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.Type: GrantFiled: January 25, 2021Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Patent number: 11537040Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.Type: GrantFiled: January 25, 2021Date of Patent: December 27, 2022Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Patent number: 11454876Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.Type: GrantFiled: December 14, 2020Date of Patent: September 27, 2022Assignee: Applied Materials, Inc.Inventors: Binni Varghese, Vibhu Jindal, Azeddine Zerrade, Shiyu Liu, Ramya Ramalingam
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Publication number: 20220187696Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.Type: ApplicationFiled: December 14, 2020Publication date: June 16, 2022Applicant: Applied Materials, Inc.Inventors: Binni Varghese, Vibhu Jindal, Azeddine Zerrade, Shiyu Liu, Ramya Ramalingam
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Patent number: 11300871Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.Type: GrantFiled: April 29, 2020Date of Patent: April 12, 2022Assignee: Applied Materials, Inc.Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210341828Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.Type: ApplicationFiled: April 29, 2020Publication date: November 4, 2021Applicant: Applied Materials, Inc.Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210333703Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.Type: ApplicationFiled: April 20, 2021Publication date: October 28, 2021Applicant: Applied Materials, IncInventors: Wen Xiao, Vibhu Jindal, Weimin Li, Sanjay Bhat, Azeddine Zerrade
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Publication number: 20210302826Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.Type: ApplicationFiled: March 23, 2021Publication date: September 30, 2021Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
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Publication number: 20210232042Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.Type: ApplicationFiled: January 25, 2021Publication date: July 29, 2021Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam
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Publication number: 20210232041Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.Type: ApplicationFiled: January 25, 2021Publication date: July 29, 2021Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210232040Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.Type: ApplicationFiled: January 25, 2021Publication date: July 29, 2021Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210232039Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.Type: ApplicationFiled: January 19, 2021Publication date: July 29, 2021Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210124252Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.Type: ApplicationFiled: October 22, 2020Publication date: April 29, 2021Applicant: Applied Materials, Inc.Inventors: Wen Xiao, Sanjay Bhat, Shiyu Liu, Binni Varghese, Vibhu Jindal, Azeddine Zerrade
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Publication number: 20210124253Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.Type: ApplicationFiled: October 22, 2020Publication date: April 29, 2021Applicant: Applied Materials, Inc.Inventors: Herng Yau Yoong, Wen Xiao, Vibhu Jindal, Shuwei Liu, Sanjay Bhat, Azeddine Zerrade