Patents by Inventor Azeddine Zerrade

Azeddine Zerrade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210302826
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 30, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
  • Publication number: 20210232042
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam
  • Publication number: 20210232040
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210232039
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210232041
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210124252
    Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wen Xiao, Sanjay Bhat, Shiyu Liu, Binni Varghese, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210124253
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Herng Yau Yoong, Wen Xiao, Vibhu Jindal, Shuwei Liu, Sanjay Bhat, Azeddine Zerrade
  • Patent number: 7767365
    Abstract: A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: August 3, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, James Baugh, Steve McDonald, Robert Rasmussen, J. Brett Rolfson, Azeddine Zerrade
  • Patent number: 7592105
    Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: September 22, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Randall W. Chance, J. Brett Rolfson, Azeddine Zerrade
  • Publication number: 20080057411
    Abstract: A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.
    Type: Application
    Filed: August 31, 2006
    Publication date: March 6, 2008
    Inventors: Craig M. Carpenter, James Baugh, Steve McDonald, Robert Rasmussen, J. Brett Rolfson, Azeddine Zerrade
  • Patent number: 7147974
    Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: December 12, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Randall W. Chance, J. Brett Rolfson, Azeddine Zerrade
  • Publication number: 20060257757
    Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.
    Type: Application
    Filed: July 13, 2006
    Publication date: November 16, 2006
    Inventors: Randall Chance, J. Rolfson, Azeddine Zerrade
  • Publication number: 20050077266
    Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.
    Type: Application
    Filed: October 14, 2003
    Publication date: April 14, 2005
    Inventors: Randal Chance, J. Rolfson, Azeddine Zerrade