Abstract: The invention relates to thin film single layers, electronic components such as multilayer capacitors which utilize thin film layers, and to their methods of manufacture. Chemical solution deposition and microcontact printing of dielectric and electrode layers are disclosed. High permittivity BaTiO3 multilayer thin film capacitors are prepared on Ni foil substrates by microcontact printing and by chemical solution deposition. Multilayer capacitors with BaTiO3 dielectric layers and LaNiO3 internal electrodes are prepared, enabling dielectric layer thicknesses of 1 ??m or less. Microcontact printing of precursor solutions of the dielectric and electrode layers is used.

Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one power feed-through capacitor is provided. The capacitor is mounted on the first planar face with the first external termination in direct electrical contact with a first upper connection and the second external termination is in direct electrical contact with a second upper connection. At least one upper connection, first external termination and second external termination are arranged for direct electrical contact with element contact pads of a common element.

Abstract: The invention relates to thin film single layers, electronic components such as multilayer capacitors which utilize thin film layers, and to their methods of manufacture. Chemical solution deposition and microcontact printing of dielectric and electrode layers are disclosed. High permittivity BaTiO3 multilayer thin film capacitors are prepared on Ni foil substrates by microcontact printing and by chemical solution deposition. Multilayer capacitors with BaTiO3 dielectric layers and LaNiO3 internal electrodes are prepared, enabling dielectric layer thicknesses of 1 ?m or less. Microcontact printing of precursor solutions of the dielectric and electrode layers is used.

Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one power feed-through capacitor is provided. The capacitor is mounted on the first planar face with the first external termination in direct electrical contact with a first upper connection and the second external termination is in direct electrical contact with a second upper connection. At least one upper connection, first external termination and second external termination are arranged for direct electrical contact with element contact pads of a common element.

Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one power feed-through capacitor is provided. The capacitor has a plurality of parallel plates with a dielectric there between. At least one first external termination is in electrical contact with a first set of alternate parallel plates and at least one second external termination is in electrical contact with a second set of alternate parallel plates.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A capacitor with a multiplicity of first plates and second plates in parallel relationship wherein the first plates terminate at a first face and the second plates terminate at a second face. A dielectric is between the first plates and the second plates. A first external termination is in electrical contact with the first plates and a second external termination is in electrical contact with the second plates. A first lead terminal is in electrical contact with the first external termination and the first lead terminal has a first foot below the first external termination and a first solder stop coated on the first foot between the first foot and the first external termination. A second lead terminal is in electrical contact with the second external termination wherein the second lead terminal comprises a second foot below the second external termination and a second solder stop is coated on the second foot between the second foot and the second external termination.

Abstract: A process for forming a multilayer ceramic capacitor. The process includes depositing a ceramic precursor on a substrate and an electrode ink in a predetermined pattern on the ceramic precursor to form a green sheet. The electrode ink has an adhesion promoter incorporated therein. The green sheet is overlayed with at least one second green sheet to form a layered green sheet which is then fused under pressure.

Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one capacitor is provided. The capacitor has a plurality of parallel plates with a dielectric there between. At least one first external termination is in electrical contact with a first set of alternate parallel plates and at least one second external termination is in electrical contact with a second set of alternate parallel plates.

Abstract: A process for forming a capacitive couple. The process includes forming a highly porous body of a conducting material with interior struts and voids in electrical contact. A dielectric layer is formed in the voids on the struts with a material having a dielectric constant above 100. An insulating layer is formed on the struts not covered by the dielectric layer. A conductive layer is formed on the dielectric layer and on the insulating layer.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A process for forming a multilayer ceramic device. The device includes forming a ceramic precursor layer followed by ink jet printing in alternating order an electrode precursor in a predetermined pattern on the ceramic precursor layer to form an electrode and a ceramic ink on the electrode. The ceramic precursor is then sintered.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-v)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthamide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-v)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthanide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.

Abstract: A low inductance multi-layer capacitor. The capacitor includes interleaved parallel internal electrode plates with dielectric there between. Each internal electrode plate includes two lead-out tabs and is generally T shaped. A first external electrode terminal is electrically connected to the lead-out tabs of the even internal electrode plates, and a second external electrode terminal is electrically connected to the lead-out tabs of the odd internal electrode plates. The external electrode terminals are on a common first exterior surface and a common opposing second exterior surface of the capacitor.

Abstract: A ceramic capacitor is disclosed. The capacitor comprises a plurality of base metal inner electrode layers, a plurality of ceramic dielectric layers between the inner electrode layers, and external electrodes in electrical conductivity with the inner electrode layers. At least one secondary component having an intentionally added chemistry is dispersed in the inner electrode layers and/or the dielectric layers. The chemistry evolves an oxidizing species in a controlled manner, such that it offsets localized highly reducing atmospheres that are present when the capacitor is fired in a reducing atmosphere, thereby promoting enhanced electrode connectivity in thin layer base metal multilayer capacitors.