Abstract: A temperature detection system (10) comprising a layer of spin cross-over material (11) in thermal contact with a target surface (12); at least one first light source (13) configured to provide a first and a second illumination (13a, 33a) of at least a first portion (12a) of the layer of spin cross-over material (11); at least one first light receiver (14) configured to capture first and second return light (14b, 34b) coming from the layer of spin cross-over material (11) and resulting respectively from the first and second illuminations; generate a first signal (S1) based on the first return light (14b); and generate a second signal (S2) based on the second return light (34b); a computation circuit (15, 17) configured to determine, based at least on a correlation between the first and second signals (S1, S2), a temperature of the layer of spin cross-over material (11).

Abstract: The invention relates to the use of a spin transition material to measure and/or limit the temperature in an electronic and/or photonic component, to methods for thermometrically measuring and/or limiting the overheating of components, as well as to electronic or photonic components comprising a film composed of said spin transition material.

Abstract: A micromagnetometry system for detecting the presence of very small quantities of magnetic particles comprises a first magnetic hybrid AMR/PHR multiring sensor using a Wheastone bridge electrical configuration, a first current source, a first voltage measurement device, a set of at least one magnetic particles deposited on the first magnetic sensor and a processing unit for detecting from a set of different measured differential voltages a magnetic flux shift representative of the presence of a least one deposited magnetic particle. The micromagnetometry system comprises means for creating a magnetic excitation field HAC to make produce by each motionless magnetic particle a stray magnetic field oscillating along the time at a constant frequency ? ranging from 10 Hz to 3 KHz.

Abstract: A micromagnetometry system for detecting the presence of very small quantities of magnetic particles comprises a first magnetic hybrid AMR/PHR multi-ring sensor using a Wheastone bridge electrical configuration, a first current source, a first voltage measurement device, a set of at least one magnetic particles deposited on the first magnetic sensor and a processing unit for detecting from a set of different measured differential voltages a magnetic flux shift representative of the presence of a least one deposited magnetic particle. The micromagnetometry system comprises means for creating a magnetic excitation field HAC to make produce by each motionless magnetic particle a stray magnetic field oscillating along the time at a constant frequency ? ranging from 10 Hz to 3 KHz.

Abstract: This application relates to a process for the application of thin layers of substantially pure spin transition molecular materials while maintaining the hysteresis properties of the material. The process makes it possible to obtain a dense uniform surface with very low roughness.

Abstract: A surface marking method using a thermochromatic spin transition material.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Abstract: This application relates to a new process for the application of thin layers of substantially pure spin transition molecular materials while maintaining the hysteresis properties of the material. The process makes it possible to obtain a dense uniform surface with very low roughness.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.