Patents by Inventor BM Farid RAHMAN

BM Farid RAHMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures
    Patent number: 9553348
    Abstract: A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: January 24, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Barbara S. Dewitt, Essam Mina, BM Farid Rahman, Guoan Wang
  • ON-CHIP VERTICAL THREE DIMENSIONAL MICROSTRIP LINE WITH CHARACTERISTIC IMPEDANCE TUNING TECHNIQUE AND DESIGN STRUCTURES
    Publication number: 20160226123
    Abstract: A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.
    Type: Application
    Filed: April 13, 2016
    Publication date: August 4, 2016
    Applicant: University of South Carolina
    Inventors: Barbara S. DEWITT, Essam MINA, BM Farid RAHMAN, Guoan WANG
  • Three dimensional branchline coupler using through silicon vias and design structures
    Patent number: 9035719
    Abstract: A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Barbara S. Dewitt, Essam Mina, BM Farid Rahman, Guoan Wang, Wayne H. Woods, Jr.
  • THREE DIMENSIONAL BRANCHLINE COUPLER USING THROUGH SILICON VIAS AND DESIGN STRUCTURES
    Publication number: 20150054595
    Abstract: A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 26, 2015
    Applicants: University of South Carolina, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Barbara S. DEWITT, Essam MINA, BM Farid RAHMAN, Guoan WANG, Wayne H. WOODS, JR.
  • ON-CHIP VERTICAL THREE DIMENSIONAL MICROSTRIP LINE WITH CHARACTERISTIC IMPEDANCE TUNING TECHNIQUE AND DESIGN STRUCTURES
    Publication number: 20150054592
    Abstract: A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 26, 2015
    Applicants: University of South Carolina, INTERNATIIONAL BUSINESS MACHINES CORPORATION
    Inventors: Barbara S. DEWITT, Essam MINA, BM Farid RAHMAN, Guoan WANG