Abstract: The invention relates to a method of eliminating fragments of material present on the exposed surface of a first wafer bonded to a second wafer, the method including a step consisting of placing the first wafer in a liquid solution and propagating ultrasonic waves in the solution. The invention also relates to a process for manufacturing a multilayer structure comprising the following successive steps: bonding of a first wafer to a second wafer so as to form a multilayer structure; annealing of the structure; and thinning of the first wafer, including at least one step of chemically etching the first wafer. The process further includes, after the chemical etching step, the elimination of fragments of material present on the exposed surface of the thinned first wafer.

Abstract: A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.