Abstract: The present disclosure relates to a Dual Fin SCR device having two parallel fins on which cathode, anode, n- and p-type triggering taps are selectively doped, wherein one Fin (or group of parallel Fins) comprises anode and n-tap, and other Fin (or group of parallel Fins) comprises cathode and p-tap. As key regions of the proposed SCR (anode and cathode), which carry majority of current after triggering, are placed diagonally, they provide substantial benefit in terms of spreading current and dissipating heat. The proposed SCR ESD protection device helps obtain regenerative feedback between base-collector junctions of two back-to-back bipolar transistors, which enables the proposed SCR to shunt ESD current. The proposed SCR design enables lower trigger and holding voltage for efficient and robust ESD protection. The proposed SCR device/design helps offer a tunable trigger voltage and a holding voltage with highfailure threshold.

Abstract: The present disclosure relates to a Dual Fin SCR device having two parallel fins on which cathode, anode, n- and p- type triggering taps are selectively doped, wherein one Fin (or group of parallel Fins) comprises anode and n-tap, and other Fin (or group of parallel Fins) comprises cathode and p-tap. As key regions of the proposed SCR (anode and cathode), which carry majority of current after triggering, are placed diagonally, they provide substantial benefit in terms of spreading current and dissipating heat. The proposed SCR ESD protection device helps obtain regenerative feedback between base—collector junctions of two back-to-back bipolar transistors, which enables the proposed SCR to shunt ESD current. The proposed SCR design enables lower trigger and holding voltage for efficient and robust ESD protection. The proposed SCR device/design helps offer a tunable trigger voltage and a holding voltage with highfailure threshold.