Patents by Inventor Babak Kadkhodayan
Babak Kadkhodayan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8911589Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.Type: GrantFiled: July 2, 2013Date of Patent: December 16, 2014Assignee: Lam Research CorporationInventors: Jeremy Chang, Andreas Fischer, Babak Kadkhodayan
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Patent number: 8900398Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.Type: GrantFiled: August 31, 2010Date of Patent: December 2, 2014Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Michael C. Kellogg, Babak Kadkhodayan, Andrew D. Bailey, III
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Patent number: 8801892Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: GrantFiled: March 25, 2008Date of Patent: August 12, 2014Assignee: Lam Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Publication number: 20130292056Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.Type: ApplicationFiled: July 2, 2013Publication date: November 7, 2013Inventors: Jeremy Chang, Andreas Fischer, Babak Kadkhodayan
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Patent number: 8500953Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.Type: GrantFiled: March 31, 2009Date of Patent: August 6, 2013Assignee: Lam Research CorporationInventors: Jeremy Chang, Andreas Fischer, Babak Kadkhodayan
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Patent number: 8465620Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.Type: GrantFiled: May 15, 2008Date of Patent: June 18, 2013Assignee: Lam ResearchInventors: David W. Benzing, Babak Kadkhodayan
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Patent number: 8402918Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.Type: GrantFiled: April 7, 2009Date of Patent: March 26, 2013Assignee: Lam Research CorporationInventors: Babak Kadkhodayan, Anthony de la Llera
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Patent number: 8313805Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.Type: GrantFiled: March 16, 2012Date of Patent: November 20, 2012Assignee: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Publication number: 20120171872Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.Type: ApplicationFiled: March 16, 2012Publication date: July 5, 2012Applicant: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Patent number: 8206506Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.Type: GrantFiled: July 7, 2008Date of Patent: June 26, 2012Assignee: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Patent number: 8161906Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.Type: GrantFiled: July 7, 2008Date of Patent: April 24, 2012Assignee: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Publication number: 20110108524Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.Type: ApplicationFiled: August 31, 2010Publication date: May 12, 2011Inventors: Rajinder Dhindsa, Michael C. Kellogg, Babak Kadkhodayan, Andrew D. Bailey, III
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Publication number: 20110024049Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.Type: ApplicationFiled: July 30, 2009Publication date: February 3, 2011Applicant: c/o Lam Research CorporationInventors: Tom Stevenson, Daniel Byun, Saurabh Ullal, Babak Kadkhodayan, Rajinder Dhindsa
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Publication number: 20100252197Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.Type: ApplicationFiled: April 7, 2009Publication date: October 7, 2010Applicant: Lam Reseach CorporationInventors: BABAK KADKHODAYAN, Anthony de la Llera
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Publication number: 20100003824Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.Type: ApplicationFiled: July 7, 2008Publication date: January 7, 2010Applicant: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Publication number: 20100000683Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.Type: ApplicationFiled: July 7, 2008Publication date: January 7, 2010Applicant: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
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Publication number: 20090186487Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.Type: ApplicationFiled: March 31, 2009Publication date: July 23, 2009Applicant: Lam Research CorporationInventors: Jeremy Chang, Andreas Fischer, Babak Kadkhodayan
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Publication number: 20090090695Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.Type: ApplicationFiled: August 28, 2008Publication date: April 9, 2009Applicant: Lam Research CorporationInventors: Babak Kadkhodayan, Rajinder Dhindsa, Yuehong Fu
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Publication number: 20080271849Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.Type: ApplicationFiled: May 15, 2008Publication date: November 6, 2008Inventors: David W. Benzing, Babak Kadkhodayan
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Publication number: 20080210377Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: ApplicationFiled: March 25, 2008Publication date: September 4, 2008Applicant: LAM RESEARCH CORPORATIONInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Peter Loewenhardt