Abstract: A method to form a coated cathode material may generally include forming, via chemical vapor deposition, an interfacial layer coating on an exterior surface of a cathode active material, wherein the interfacial layer comprises an organic polymer; and wherein the interfacial layer is substantially uniform on and conformal to the exterior surface of the cathode active material. The polymer may include poly(3,4-ethylenedioxythiophene) (PEDOT). Methods of making and using the same are also described.

Abstract: A method to form a coated cathode material may generally include forming, via chemical vapor deposition, an interfacial layer coating on an exterior surface of a cathode active material, wherein the interfacial layer comprises an organic polymer; and wherein the interfacial layer is substantially uniform on and conformal to the exterior surface of the cathode active material. The polymer may include poly(3,4-ethylenedioxythiophene) (PEDOT). Methods of making and using the same are also described.

Abstract: Manufacturing technology to fabricate liquid metal-based soft and flexible electronics (sensors, antennas, etc.) in a high-throughput fashion, with fabrication rates that may approach that of the traditional integrated circuit components and circuits, are described. The technique allows creation of liquid-metal-only circuits, as well as seamless integration of solid IC chips into the circuits, in which liquid metal traces are used as flexible interconnects and/or as other circuit elements. The process may be applied at the wafer scale and may be integrated into the traditional microelectronics fabrication processes. Many sensors, antennas, and other circuit elements may be directly created using liquid metal, and when combined with the IC chips, a broad range of electronic functionality may be provided in a flexible, soft circuit that can be conformable, wearable.

Abstract: Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.

Abstract: Thin polymer layers for use as electrolytes in electrochemical cells, and associated electrochemical cells and methods, are generally described. The thin polymer layers may be formed by initiated chemical vapor deposition (iCVD) and may be doped with an electroactive species (e.g., Li+). The resultant thin polymer layers may exhibit high ionic conductivity and an ability to conformally coat structures having complex geometries (e.g., electrodes having high aspect ratios).

Abstract: A method for growing crystalline semiconductor oxide thin films. A substrate is coated with a conducting oxide (e.g., indium tin oxide). The coated substrate is immersed in a growth solution, such as a solution of a titanium-based sol-gel precursor combined with tetraethylene glycol. The coated substrate and the growth solution are heated in a microwave reactor via microwave radiation. Film growth of crystalline semiconductor oxide thin films (e.g., titanium dioxide thin films) are then catalyzed by microwave interaction with the conducting oxide on the substrate. Such a process enables crystalline semiconductor oxide thin films to be grown on a flexible or heat-sensitive substrate (e.g., plastic) using a low temperature in a fast and inexpensive manner.

Abstract: Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.

Abstract: The present invention provides a surface modified cathode and method of making surface modified cathode with high discharge capacity and rate capability having a lithium-excess Li[M1-yLiy]O2 (M=Mn, Co, and Ni or their combinations and 0<y?0.33) cathode surface with a surface modification comprising lithium-ion coated sample conductor, or an electronic conductor, or a mixed lithium-ion and electronic conductor to suppress the elimination of oxide ion vacancies, reduce the solid-electrolyte interfacial (SEI) layer thickness, reduce the irreversible capacity loss in the first cycle, and enhance the rate capability.