Abstract: The present description concerns a support (54) for semiconductor substrates (26) comprising an assembly of trays (58A, 58B, 58C, 58D) having the semiconductor substrates resting thereon. Each tray is made of an electrically-conductive material and has at least one substantially vertical surface having locations arranged in at least two horizontally-oriented rows and two vertically-oriented columns. Each location receives a semiconductor substrate oriented with an inclination relative to a vertical direction varying from 1° to 10°. Each tray comprises, at each location, a recess or a cavity covered with the substrate (56). The trays of each pair of trays facing each other are separated by electrically-insulating spacers (60).

Abstract: A heating device infrared radiation lamps 24, 26 designed to perform rapid thermal processing of the substrate 12 inside a reaction chamber 14 with a transparent window 34. The infrared lamps 24, 26 are arranged in two superposed stages A, B extending on a single side of the substrate 12, the lamps 24 of the lower stage A being arranged perpendicularly with respect to the lamps 26 of the upper stage B. Adjusting the supply power by of lamps for greater heating on the edges than in the center of the substrate 12. A reflector 36 in the form of a distribution grid 38 is designed to reflect the infrared radiation to control the power ratios between the different heating zones. This results in uniform heating of the substrate 12 regardless of the geometry and dimensions thereof.

Abstract: A heating device comprises infrared radiation lamps 24, 26 designed to perform rapid thermal processing of the substrate 12 inside a reaction chamber 14 with a transparent window 34. The infrared lamps 24, 26 are arranged in two superposed stages A, B extending on a single side of the substrate 12, the lamps 24 of the lower stage A being arranged perpendicularly with respect to the lamps 26 of the upper stage B. Means for adjusting the supply power by group of lamps provide greater heating on the edges than in the centre of the substrate 12. A reflector 36 in the form of a distribution grid 38 is designed to reflect the infrared radiation to control the power ratios between the different heating zones. This results in uniform heating of the substrate 12 regardless of the geometry and dimensions thereof.