Patents by Inventor Bae Geum Jong

Bae Geum Jong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having hetero grain stack gate and method of forming the same
    Patent number: 6884705
    Abstract: A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure.
    Type: Grant
    Filed: July 16, 2003
    Date of Patent: April 26, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwa Sung Rhee, Nae In Lee, Jung Il Lee, Sang Su Kim, Bae Geum Jong
  • Semiconductor device having hetero grain stack gate and method of forming the same
    Publication number: 20040012055
    Abstract: A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure.
    Type: Application
    Filed: July 16, 2003
    Publication date: January 22, 2004
    Inventors: Hwa Sung Rhee, Nae In Lee, Jung II Lee, Sang Su Kim, Bae Geum Jong
  • Semiconductor device having hetero grain stack gate
    Patent number: 6667525
    Abstract: A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: December 23, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwa Sung Rhee, Nae In Lee, Jung Il Lee, Sang Su Kim, Bae Geum Jong
  • SEMICONDUCTOR DEVICE HAVING HETERO GRAIN STACK GATE
    Publication number: 20030164528
    Abstract: A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure.
    Type: Application
    Filed: March 4, 2002
    Publication date: September 4, 2003
    Inventors: Hwa Sung Rhee, Nae In Lee, Jung II Lee, Sang Su Kim, Bae Geum Jong