Abstract: A stacking structure of a photoelectric device includes a base, a first conducting layer, a first semiconductor layer, a second semiconductor layer, a second conducting layer and two electrodes. The base is essentially made of a light-permeable material. The first conducting layer is arranged on the base and essentially made of a light-permeable, non-metal material. The first semiconductor layer is arranged on the first conducting layer and essentially made of a ternary compound with chalcopyrite phase. The second semiconductor layer is arranged on the first semiconductor layer. The second conducting layer is arranged on the second semiconductor layer and essentially made of a light-permeable semiconductor material different from the light-permeable, non-metal material of the first conducting layer. The two electrodes are respectively arranged on the first and second conducting layers.

Abstract: A stacking structure of a light-emitting device is disclosed. The stacking structure of the light-emitting device includes a substrate, a first semiconductor layer, a second semiconductor layer, a conducting layer, and two electrodes. The substrate is essentially made of a light-permeable, non-metallic material. The first semiconductor layer is arranged on the substrate and essentially made of a ternary compound with chalcopyrite phase. The second semiconductor layer is arranged on the first semiconductor layer. The conducting layer is arranged on the second semiconductor layer and essentially made of a light-permeable semiconducting material different from the material of the substrate. The two electrodes are respectively arranged on the substrate and the conducting layer. Thus, the problem of having difficulty in emitting the light outwards from the side of the light-emitting diode adjacent to the substrate, as commonly seen in the conventional light-emitting device, is overcome.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.