Abstract: A method of manufacturing a mask for forming a pattern in a semiconductor device is disclosed. Material having high reflexibility is formed between a quartz substrate and a patterned chromium layer. The thickness of the quartz substrate is determined in consideration of the standing wave effect so as to use energy reflected off a patterned chromium layer and re-reflected off the quartz substrate base interface to augment direct, non-reflected light energy for the purpose of forming an image on a wafer. Accordingly, the amount of light exposed energy through gaps between adjacent chromium layer areas on the mask is increased during the formation of a micro pattern on the wafer. As a result, energy exposure time decreases and the depth of the focus increases.