Abstract: Disclosed is a composition for diagnosing, preventing or treating drug addiction based on synaptotagmin binding cytoplasmic RNA interacting protein (SYNCRIP). SYNCRIP or a gene encoding the protein can be used to diagnose drug addiction. In addition, a therapeutic agent for drug addiction can be discovered by measuring the expression of SYNCRIP. Furthermore, an agent expressing SYNCRIP or promoting the activity of SYNCRIP can be used to prevent or treat drug addiction.

Abstract: The present invention relates to a glass ceramic composition comprising SiO2, Ca(OH)2, CaF2, B2O3, MgO, and hydroxyapatite; a bioactive crystallized glass ceramic comprising each of CaSiO3, Ca10(PO4)6(OH)2, and CaMgSi2O6 in an amount of 20% to 60% by weight; an implant for early osseointegration comprising the glass ceramic; and a method for manufacturing the implant.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized non-zinc metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer at low temperature on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: An electrostatic power generation fiber comprising a thread-shaped core that comprises a conductive component; a charge building-inducting-tunneling layer on the core that comprises a contact electrification material. An embodiment of the present invention is directed to an electrostatic power generation fiber comprising: (a) a thread-shaped core that comprises a conductive component; and (b) a charge building-inducting-tunneling layer on the core that comprises a contact electrification material; wherein electrical charge, formed via contact electrification of the charge building-inducting-tunneling layer, travels along the core, which during electrostatic power generation the core is a constituent of an electrical network.

Abstract: Provided is a power amplifier installed in wireless communication terminals and systems. According to one aspect of the present invention, a reconfigurable power amplifier capable of selecting a wide band frequency is provided. The reconfigurable power amplifier includes input transistors receiving a radio frequency (RF) signal and a reconfigurable adaptive power cell configured to select the wide band frequency by applying a common-gate bias voltage to a plurality of common-gate transistors with a plurality of separate common gates to amplify the RF signal.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: Provided is a power amplifier installed in wireless communication terminals and systems. According to one aspect of the present invention, a reconfigurable power amplifier capable of selecting a wide band frequency is provided. The reconfigurable power amplifier includes input transistors receiving a radio frequency (RF) signal and a reconfigurable adaptive power cell configured to select the wide band frequency by applying a common-gate bias voltage to a plurality of common-gate transistors with a plurality of separate common gates to amplify the RF signal.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided.

Abstract: Disclosed is a III-nitride compound semiconductor nanophase opto-electronic cell, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nitride semiconductor nanophase opto-electronic cell and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor thin film growth on silicon substrates. Accordingly, a high-quality III-nitride compound semiconductor nanophase opto-electronic cell having no crystalline defect can be provided. Furthermore, the opto-electronic cell according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor opto-electronic cell using III-nitride thin films grown on silicon substrates.