Abstract: A photosensitive resin composition includes an additive; a binder resin; a photopolymerizable compound; a photopolymerization initiator; a colorant; and a solvent, wherein the additive includes a leveling agent, and the leveling agent is included in an amount of about 15 ppm to about 30 ppm, based on a total amount of the photosensitive resin composition.

Abstract: A photosensitive resin composition, a photosensitive resin layer manufactured using the same, and a color filter, the photosensitive resin composition includes a colorant; a photopolymerizable compound; a photopolymerization initiator; a binder resin; and a solvent, wherein the colorant includes a first pigment and a second pigment, and a D50 particle diameter ratio of the first pigment and the second pigment is about 1.01:1 to about 1.

Abstract: Provided are a compound represented by a specific chemical formula, a photosensitive resin composition including same, a photosensitive resin film prepared using the photosensitive resin composition, a color filter including the photosensitive resin film and a CMOS image sensor including the color filter.

Abstract: A core-shell dye, a near-infrared absorbing resin composition including the same, a near-infrared absorbing film, an optical filter, and a CMOS image sensor, the core-shell dye includes a core represented by Chemical Formula 1; and a shell surrounding the core, the shell being represented by Chemical Formula 2;

Abstract: A photosensitive resin composition, a photosensitive resin layer, a color filter, and a display device, the photosensitive resin composition includes a photopolymerizable compound; a photopolymerization initiator; a colorant; a binder resin; and a solvent, wherein the solvent includes a first solvent and a second solvent, the first solvent has a boiling point of greater than about 0° C. and less than about 150° C. at 1 atm, the second solvent has a boiling point of greater than or equal to about 150° C. at 1 atm, and the first solvent is included in the photosensitive resin composition in an amount greater than that of the second solvent.

Abstract: A core-shell dye, a photosensitive resin composition including the same, and a color filter manufactured using the photosensitive resin composition, the core-shell dye including a core represented by Chemical Formula 1; and a shell represented by Chemical Formula 2, the shell surrounding the core,

Abstract: A compound, a photosensitive resin composition including the same, a color filter manufactured using the photosensitive resin composition, and a CMOS image sensor including the color filter, the compound being represented by Chemical Formula 1: A-L-B.

Abstract: A core-shell compound, a photosensitive resin composition including the same, a photosensitive resin layer manufactured using the photosensitive resin composition, a color filter including the photosensitive resin layer, and a CMOS image sensor including the color filter, the core-shell compound including a core represented by Chemical Formula 1 and a shell surrounding the core, the shell being represented by Chemical Formula 2:

Abstract: An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

Abstract: A dicing die-bonding film and a method of forming a groove in a dicing die-bonding film, the film including a base film; a pressure-sensitive adhesive layer stacked on the base film; and a bonding layer stacked on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer includes a first region overlapping with the bonding layer, and a second region not overlapping with the bonding layer, the second region including a third region adjacent to the first region, and a fourth region adjacent to the third region and having a groove formed therein.

Abstract: A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mm2 or greater.

Abstract: An optically clear adhesive, a dicing die bonding film, and a semiconductor device, the optically clear adhesive including a curing agent; and an acrylic copolymer, the acrylic copolymer including an alkyl group, a hydroxyl group, and at least one of a phosphate group and a silane group.

Abstract: An adhesive composition for a semiconductor has two exothermic peaks between 65° C. and 350° C. and has an area ratio of voids of less than 10%, measured after curing at 150° C. for 10 minutes and then at 150° C. for 30 minutes, and then molding at 175° C. for 60 seconds. A first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C.

Abstract: An adhesive composition for semiconductors, an adhesive film prepared using the adhesive composition, and a semiconductor device including the adhesive film, the adhesive composition exhibiting two exothermic peaks at temperatures ranging from 65° C. to 350° C., wherein a first exothermic peak appears at a lower temperature than a second exothermic peak, and the adhesive composition has a curing rate of about 70% to 100% in a first exothermic peak zone, as calculated by Equation 1: Curing rate=[(Heating value upon 0 cycle?Heating value after 1 cycle)/Heating value upon 0 cycle]×100.

Abstract: A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mm2 or greater.

Abstract: A dicing die-bonding film and a method of forming a groove in a dicing die-bonding film, the film including a base film; a pressure-sensitive adhesive layer stacked on the base film; and a bonding layer stacked on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer includes a first region overlapping with the bonding layer, and a second region not overlapping with the bonding layer, the second region including a third region adjacent to the first region, and a fourth region adjacent to the third region and having a groove formed therein.

Abstract: An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

Abstract: An adhesive composition for a semiconductor has two exothermic peaks between 65° C. and 350° C. and has an area ratio of voids of less than 10%, measured after curing at 150° C. for 10 minutes and then at 150° C. for 30 minutes, and then molding at 175° C. for 60 seconds. A first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C.

Abstract: An adhesive composition for semiconductors, an adhesive film prepared using the adhesive composition, and a semiconductor device including the adhesive film, the adhesive composition exhibiting two exothermic peaks at temperatures ranging from 65° C. to 350° C., wherein a first exothermic peak appears at a lower temperature than a second exothermic peak, and the adhesive composition has a curing rate of about 70% to 100% in a first exothermic peak zone, as calculated by Equation 1: Curing rate=[(Heating value upon 0 cycle?Heating value after 1 cycle)/Heating value upon 0 cycle]×100.

Abstract: An optically clear adhesive, a dicing die bonding film, and a semiconductor device, the optically clear adhesive including a curing agent; and an acrylic copolymer, the acrylic copolymer including an alkyl group, a hydroxyl group, and at least one of a phosphate group and a silane group.