Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

Abstract: Disclosed is a vertically arranged semiconductor device. The semiconductor device can include a semiconductor substrate comprising a first conductive type buried layer, a first conductive type drift region formed on the first conductive type buried layer, and a second conductive type well formed on the first conductive type drift region. A gate insulating layer and a gate electrode can be formed in regions of the substrate from which the first conductive type drift region and the second conductive type well are selectively removed. A first conductive type source region can be formed at sides of the gate electrode. A n insulating layer can be formed on the semiconductor substrate including the gate electrode and can include a trench formed through the insulating layer and a portion of the second conductive type well. A barrier layer can be formed in the trench and a source contact including tungsten and aluminum can be deposited in the trench.

Abstract: A method of manufacturing a metal-insulator-metal (MIM) capacitor that includes at least one of the following steps: Sequentially forming a bottom metal film, an insulating film, and a top metal film over a wafer. Forming a first pattern for etching the top metal film and the insulating film. Etching the top metal film and the insulating film, using the formed first pattern, and then stripping the first pattern. Conducting a heat treatment and a cooling split for the wafer. Forming a metal pattern for etching the bottom metal film. Etching the bottom metal film, using the formed metal pattern, and then stripping the metal pattern.

Abstract: Provided are a semiconductor device and a method for manufacturing the same. In the method, a first conductive type buried layer and a first conductive type drift region are formed on a semiconductor substrate. A gate dielectric and gate electrode are formed in a first trench that extends into the first conductive type drift region. An oxide layer is formed on the semiconductor substrate, and first conductive type source regions are formed at sides of the gate electrode in a second conductive type well on the first conductive type drift region. An interlayer dielectric, the oxide layer, and the second conductive type well are selectively etched, forming a second trench. A tungsten plug is formed on a barrier layer in the second trench. Aluminum is buried on the tungsten plug to form a source contact. A drain electrode layer is formed connected to the first conductive type buried layer.

Abstract: Disclosed is a vertically arranged semiconductor device. The semiconductor device can include a semiconductor substrate comprising a first conductive type buried layer, a first conductive type drift region formed on the first conductive type buried layer, and a second conductive type well formed on the first conductive type drift region. A gate insulating layer and a gate electrode can be formed in regions of the substrate from which the first conductive type drift region and the second conductive type well are selectively removed. A first conductive type source region can be formed at sides of the gate electrode. A n insulating layer can be formed on the semiconductor substrate including the gate electrode and can include a trench formed through the insulating layer and a portion of the second conductive type well. A barrier layer can be formed in the trench and a source contact including tungsten and aluminum can be deposited in the trench.

Abstract: A method of manufacturing a metal-insulator-metal (MIM) capacitor that includes at least one of the following steps: Sequentially forming a bottom metal film, an insulating film, and a top metal film over a wafer. Forming a first pattern for etching the top metal film and the insulating film. Etching the top metal film and the insulating film, using the formed first pattern, and then stripping the first pattern. Conducting a heat treatment and a cooling split for the wafer. Forming a metal pattern for etching the bottom metal film. Etching the bottom metal film, using the formed metal pattern, and then stripping the metal pattern.