Abstract: Methods and circuits in an application circuit to compensate for skew in the transmission of serial data between field programmable gate arrays (FPGAs) in the application circuit. A clock signal source external to both FPGAs generates a clock signal applied to both FPGAs. A transmitting FPGA generates a serial data stream comprising the current values of a plurality of signals within the transmitting FPGA and transmits the serial data stream based on its clock signal. The receiving FPGA receives the serial data stream and applies a programmed delay to the received serial data stream to compensate for skew in received serial data stream relative to its clock signal. The programmed delay value may be determined at initialization (or reset) of the FPGAs by transmitting synchronization data from the first transmitting FPGA to the receiving FPGA. The receiving FPGA adjusts a programmable delay while receiving synchronization data until it sense bit and word alignment relative to its clock signal.

Abstract: A wear indication system for use in turbine engines to measure the rate of gap closure between a seal holder and a rotor disk in a compressor blade assembly is disclosed. The wear indication system may include a support system capable of supporting a wear indicator formed from a relatively soft wear material without enabling the wear indicator to shift position or to fall out. One or more wear pins may be releasably attached to a compression plate with a seal holder. The seal holder may restrain the wear pin in position in an interference fit. During turbine engine operation, the wear pin is used to determine the rate of gap closing between a rotor disk and a seal holder precisely so that gas turbine engine repair can be scheduled and proper actions be taken to prevent rubbing between rotating and stationary parts of a compressor.

Abstract: The present invention provides an optically active compound of general formula (I) and salts thereof: wherein R? is selected from a group consisting of t-butyl amine, n-butylamine, iso-butylamine, iso-propyl amine, 4-phenyl-piperazine-1-ylamine, 4-(2-methoxyphenyl)-piperazin-1-ylamine, and 3,4-dimethoxy phenethyl amine; wherein R1, R2 and R3 are selected from the group consisting of hydrogen, methyl or iso pentenyl; R4, R5 and R6 are selected from the group consisting of Oil, O-alkyl, O-benzyl, O-substituted phenyl or combination thereof.

Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Abstract: A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

Abstract: A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.

Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Abstract: The invention relates to the development of a novel high yielding multiple disease resistant/tolerant stable variety of opium poppy (Papaver somniferum L. 2n=22) christened ‘Madakini’.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: Crystals having a narrowband transmission window in the UV range and methods for producing such crystals are disclosed. The method comprises the steps of preparing a saturated nutrient solution of a nickel compound and a dopant salt; and incubating the nutrient solution under conditions suitable for crystal growth. The nickel compound is nickel silicon fluoride, nickel fluoroborate, or potassium nickel sulfate. The dopant salt is a salt of cobalt, calcium, barium, strontium, lead, copper, germanium, praseodymium, neodymium, zinc, lithium, potassium, sodium, rubidium, or cesium. The doped nickel compounds crystals have a narrow transmission window in the UV range and can be used as filters for optical sensors in applications such as the passive missile approach warning systems.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: The present invention relates to a synergistic composition useful as plant and soil health enhancer, comprising urine, neem and garlic, individually or in all possible combinations, with the treatment showing it has the ability to stimulate accumulation of nutrients in the plant biomass, proliferation of plant growth promoting, phosphate solubilizing, abiotic stress tolerant and antagonists towards plant pathogenic fungi, control phytopathogenic fungi in the rhizosphere of plants, and enhances the total phenolic contents of the plants.

Abstract: The invention relates to a novel palmarosa plant christened as “Vaishnavi”, said plant capable of setting seeds under selfing conditions and having high oil yield potential, and developed employing crop-burning technique as a physical mutagen.

Abstract: The present invention relates to a synergistic composition useful as plant and soil health enhancer, comprising urine, neem and garlic, individually or in all possible combinations, with the treatment showing it has the ability to stimulate accumulation of nutrients in the plant biomass, proliferation of plant growth promoting, phosphate solubilizing, abiotic stress tolerant and antagonists towards plant pathogenic fungi, control phytopathogenic fungi in the rhizosphere of plants, and enhances the total phenolic contents of the plants.

Abstract: The present invention relates to a novel flux useful for hot dip galvanizing of iron and iron based alloys. The present invention also relates to a process for the preparation of the flux and to the use thereof for hot dip galvanizing of iron an iron based alloys. The present invention also relates to a method for the hot dip galvanizing of iron and iron based alloys using the novel flux.

Abstract: The invention relates to a novel palmarosa plant christened as “Vaishnavi”, said plant capable of setting seeds under selfing conditions and having high oil yield potential, and developed employing crop-burning technique as a physical mutagen.

Abstract: A process for the preparation of a growth media for mass multiplication of bio-control fungi, comprising a chopped, shade-dried distillation waste in a plastic bag that is plugged with cotton followed by autoclaving and an inoculation of a strain of bio-control fungi such as Trichoderma harzianum or Gliocladium virens, and incubating the bags at room temperature for 14-30 days, and then shade drying and grinding the product to obtain a fine powder.