Patents by Inventor Bahri Ozturk

Bahri Ozturk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor containing high purity tantalum
    Patent number: 7102229
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: September 5, 2006
    Assignee: Honeywell International Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Publication number: 20050284259
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Application
    Filed: August 3, 2005
    Publication date: December 29, 2005
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Publication number: 20050284546
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Application
    Filed: August 12, 2005
    Publication date: December 29, 2005
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Patent number: 6958257
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: October 25, 2005
    Assignee: Honeywell International Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Patent number: 6955938
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: October 18, 2005
    Assignee: Honeywell International Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Patent number: 6566161
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: November 20, 2000
    Date of Patent: May 20, 2003
    Assignee: Honeywell International Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Publication number: 20030082864
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Application
    Filed: August 27, 2002
    Publication date: May 1, 2003
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Publication number: 20020132388
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Application
    Filed: January 15, 2002
    Publication date: September 19, 2002
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Tantalum sputtering target and method of manufacture
    Patent number: 6323055
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: November 27, 2001
    Assignee: The Alta Group, Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue