Abstract: A semiconductor device structure includes a substrate, a first conductive layer over the substrate, a second conductive layer between the first conductive layer and the substrate and extending over the sidewalls of the first conductive layer, a dielectric layer between the second conductive layer and the substrate, a cap layer over the first conductive layer and the second conductive layer, and a liner layer on the sidewalls of the second conductive layer.

Abstract: A method of manufacturing a semiconductor device comprises the steps as follow. After forming an insulating layer with opening therein over a substrate, a polysilicon layer that partially fills the opening is formed over the substrate and then a refractory metal silicide layer that completely fills the opening is formed over the substrate. Thereafter, the polysilicon layer and the refractory metal silicide layer outside the opening are removed to expose the insulating layer. A portion of the polysilicon layer and the refractory metal silicide layer are etched back so that the surface of the polysilicon layer and the refractory metal silicide layer are below the surface of the insulating layer. After forming a cap layer over the polysilicon layer and the refractory metal silicide layer, the insulating layer is removed and then a liner layer is formed on the sidewalls of the polysilicon layer.

Abstract: A method of manufacturing a semiconductor device comprises the steps as follow. After forming an insulating layer with opening therein over a substrate, a polysilicon layer that partially fills the opening is formed over the substrate and then a refractory metal silicide layer that completely fills the opening is formed over the substrate. Thereafter, the polysilicon layer and the refractory metal silicide layer outside the opening are removed to expose the insulating layer. A portion of the polysilicon layer and the refractory metal silicide layer are etched back so that the surface of the polysilicon layer and the refractory metal silicide layer are below the surface of the insulating layer. After forming a cap layer over the polysilicon layer and the refractory metal silicide layer, the insulating layer is removed and then a liner layer is formed on the sidewalls of the polysilicon layer.