Patents by Inventor Baiei Kawano
Baiei Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7408225Abstract: A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.Type: GrantFiled: October 7, 2004Date of Patent: August 5, 2008Assignee: ASM Japan K.K.Inventors: Hiroshi Shinriki, Baiei Kawano, Akira Shimizu
-
Patent number: 7381291Abstract: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.Type: GrantFiled: July 29, 2004Date of Patent: June 3, 2008Assignee: ASM Japan K.K.Inventors: Yasuhiro Tobe, Yoshinori Morisada, Shingo Ikeda, Baiei Kawano
-
Patent number: 7276123Abstract: A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.Type: GrantFiled: July 22, 2004Date of Patent: October 2, 2007Assignee: ASM Japan K.K.Inventors: Akira Shimizu, Hideaki Fukuda, Hiroki Arai, Baiei Kawano, Takayuki Yamagishi
-
Patent number: 7267725Abstract: A thin-film deposition apparatus includes a reaction chamber, a substrate transfer chamber, a susceptor having a radially-extending step portion, a ring-shaped separation wall for separating the reaction chamber and the substrate transfer chamber at a processing position where the susceptor is positioned inside the ring-shaped separation wall, and a conductive sealing member which is interposed between the radially-extending step portion and the separation wall to seal the reaction chamber from the substrate transfer chamber when the susceptor is at a processing position.Type: GrantFiled: May 7, 2004Date of Patent: September 11, 2007Assignee: ASM Japan K.K.Inventor: Baiei Kawano
-
Publication number: 20060021701Abstract: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.Type: ApplicationFiled: July 29, 2004Publication date: February 2, 2006Applicant: ASM JAPAN K.K.Inventors: Yasuhiro Tobe, Yoshinori Morisada, Shingo Ikeda, Baiei Kawano
-
Publication number: 20050208217Abstract: A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.Type: ApplicationFiled: October 7, 2004Publication date: September 22, 2005Applicant: ASM JAPAN K.K.Inventors: Hiroshi Shinriki, Baiei Kawano, Akira Shimizu
-
Patent number: 6921556Abstract: A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.Type: GrantFiled: March 28, 2003Date of Patent: July 26, 2005Assignee: ASM Japan K.K.Inventors: Akira Shimizu, Hideaki Fukuda, Baiei Kawano, Kazuo Sato
-
Publication number: 20050098111Abstract: A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.Type: ApplicationFiled: December 16, 2004Publication date: May 12, 2005Applicant: ASM JAPAN K.K.Inventors: Akira Shimizu, Hideaki Fukuda, Baiei Kawano, Kazuo Sato
-
Publication number: 20050022737Abstract: A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.Type: ApplicationFiled: July 22, 2004Publication date: February 3, 2005Applicant: ASM JAPAN K.K.Inventors: Akira Shimizu, Hideaki Fukuda, Hiroki Arai, Baiei Kawano, Takayuki Yamagishi
-
Publication number: 20040221808Abstract: A thin-film deposition apparatus includes a reaction chamber, a substrate transfer chamber, a susceptor having a radially-extending step portion, a ring-shaped separation wall for separating the reaction chamber and the substrate transfer chamber at a processing position where the susceptor is positioned inside the ring-shaped separation wall, and a conductive sealing member which is interposed between the radially-extending step portion and the separation wall to seal the reaction chamber from the substrate transfer chamber when the susceptor is at a processing position.Type: ApplicationFiled: May 7, 2004Publication date: November 11, 2004Applicant: ASM JAPAN K.K.Inventor: Baiei Kawano
-
Publication number: 20040071874Abstract: A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.Type: ApplicationFiled: March 28, 2003Publication date: April 15, 2004Applicant: ASM JAPAN K.K.Inventors: Akira Shimizu, Hideaki Fukuda, Baiei Kawano, Kazuo Sato