Abstract: There is provided an inductively coupled plasma processing apparatus for generating uniform and stable plasma at a high density. The plasma processing apparatus for semiconductors for processing an object to be processed utilizing plasma comprises an evacuated reaction chamber for processing the object to be processed therein, an antenna formed by a plurality of linear conductors provided in the reaction chamber and an RF power supply connected to one end of the plurality of linear conductors. The antenna is formed by at least three linear conductors disposed such that they radially extend from the center of the antenna at equal intervals from each other, and each of the linear conductors is connected to the ground at one end thereof and is connected to the RF power supply at the other end. An insulating process is provided on the surface of the linear conductors of said antenna.

Abstract: There is provided an inductively coupled plasma processing apparatus for generating uniform and stable plasma at a high density. The plasma processing apparatus for semiconductors for processing an object to be processed utilizing plasma comprises an evacuated reaction chamber for processing the object to be processed therein, an antenna formed by a plurality of linear conductors provided in the reaction chamber and an RF power supply connected to one end of the plurality of linear conductors. The antenna is formed by at least three linear conductors disposed such that they radially extend from the center of the antenna at equal intervals from each other, and each of the linear conductors is connected to the ground at one end thereof and is connected to the RF power supply at the other end. An insulating process is provided on the surface of the linear conductors of said antenna.