Abstract: A microscope for a medical procedure includes: image sensors 10 creating image data; a lighting prism 20 transmitting an image of an object, which is input, to the image sensors such that an image is formed; pre-lenses 30 disposed in a pair at both sides behind the lighting prism 20 and enlarging an image of an object, and transmitting the image to the image sensors 10; objective lenses 40 provided in a pair, selectively disposed on virtual axes connecting the pair of pre-lenses 30 and the pair of image sensors 10, respectively; displays 60 provided in a pair and displaying composed image data by integrating image data converted through the image sensors 10; and an image processing unit 70 receiving image data transmitted from the image sensors 10, combining the image data with medical information transmitted from an external server, and transmitting composed image data to the displays 60.

Abstract: Disclosed herein is a method for forming a dual gate of a semiconductor device. The method comprises the steps of forming a first polysilicon layer doped with p-type impurity ions and a second polysilicon layer doped with n-type impurity ions on a first region and a second region of a semiconductor substrate, respectively, and sequentially subjecting the surfaces of the first and second polysilicon layers to wet cleaning, drying, and dry cleaning. The wet cleaning is performed by using a sulfuric acid peroxide mixture (SPM), a buffered oxide etchant (BOE), and Standard Clean-1 (SC-1) as cleaning solutions.

Abstract: A method of cleaning a semiconductor wafer, including the steps of supplying a mixed solution of a dilute hydrofluoric acid solution and hydrogen peroxide solution to a bath; loading the semiconductor wafer into the bath such that the semiconductor wafer is dipped into the mixed solution, and rinsing the semiconductor wafer with the mixed solution; draining the mixed solution and supplying deionized water to the bath, and rinsing the semiconductor wafer with the deionized water; and draining the deionized water and supplying isopropyl alcohol to the bath, and drying the semiconductor wafer with isopropyl alcohol.

Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.