Patents by Inventor Baik-Min Sung
Baik-Min Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10910373Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: GrantFiled: February 18, 2020Date of Patent: February 2, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Gun You, Se-wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Patent number: 10868007Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.Type: GrantFiled: March 17, 2020Date of Patent: December 15, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Myung-Yoon Um
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Publication number: 20200219875Abstract: A semiconductor device -is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.Type: ApplicationFiled: March 17, 2020Publication date: July 9, 2020Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Myung-Yoon Um
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Patent number: 10692864Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: GrantFiled: December 27, 2018Date of Patent: June 23, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Publication number: 20200185382Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: ApplicationFiled: February 18, 2020Publication date: June 11, 2020Inventors: JUNG-GUN YOU, Se-wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Patent number: 10629597Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.Type: GrantFiled: November 13, 2018Date of Patent: April 21, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Myung-Yoon Um
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Publication number: 20190131300Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: ApplicationFiled: December 27, 2018Publication date: May 2, 2019Inventors: JUNG-GUN YOU, Se-wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Publication number: 20190081043Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.Type: ApplicationFiled: November 13, 2018Publication date: March 14, 2019Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Myung-Yoon Um
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Patent number: 10199377Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: GrantFiled: March 17, 2017Date of Patent: February 5, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Patent number: 10157917Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.Type: GrantFiled: December 18, 2015Date of Patent: December 18, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Myung-Yoon Um
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Patent number: 10014208Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.Type: GrantFiled: February 28, 2017Date of Patent: July 3, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju-Youn Kim, Min-Choul Kim, Baik-Min Sung, Sang-Hyun Woo
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Patent number: 9865736Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.Type: GrantFiled: October 13, 2016Date of Patent: January 9, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chong-Kwang Chang, Young-Mook Oh, Hak-Yoon Ahn, Jung-Gun You, Gi-Gwan Park, Baik-Min Sung
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Publication number: 20170194324Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: ApplicationFiled: March 17, 2017Publication date: July 6, 2017Inventors: Jung-Gun You, Se-Wan PARK, Baik-Min SUNG, Bo-Cheol JEONG
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Publication number: 20170170054Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.Type: ApplicationFiled: February 28, 2017Publication date: June 15, 2017Inventors: JU-YOUN KIM, MIN-CHOUL KIM, BAIK-MIN SUNG, SANG-HYUN WOO
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Publication number: 20170110569Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.Type: ApplicationFiled: October 13, 2016Publication date: April 20, 2017Inventors: Chong-Kwang CHANG, Young-Mook OH, Hak-Yoon AHN, Jung-Gun YOU, Gi-Gwan PARK, Baik-Min SUNG
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Patent number: 9614035Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.Type: GrantFiled: February 4, 2016Date of Patent: April 4, 2017Assignee: SAMSUNG ELECTRONICS CO, LTD.Inventors: Ju-Youn Kim, Min-Choul Kim, Baik-Min Sung, Sang-Hyun Woo
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Patent number: 9601628Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: GrantFiled: December 30, 2015Date of Patent: March 21, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Bo-Cheol Jeong
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Publication number: 20160380052Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.Type: ApplicationFiled: February 4, 2016Publication date: December 29, 2016Inventors: JU-YOUN KIM, Min-Choul Kim, Baik-Min Sung, Sang-Hyun Woo
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Publication number: 20160276341Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.Type: ApplicationFiled: December 18, 2015Publication date: September 22, 2016Inventors: Jung-Gun YOU, Se-Wan PARK, Baik-Min SUNG, Myung-Yoon UM
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Publication number: 20160211379Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.Type: ApplicationFiled: December 30, 2015Publication date: July 21, 2016Inventors: Jung-Gun You, Se-Wan Park, Baik-Min Sung, Bo-Cheol Jeong